Copper PVD Chamber Shielding Against RF Noise Drift
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Solution Overview
Problem
Copper deposition during physical vapor deposition (PVD) is susceptible to redirection by radio frequency (RF) and electromagnetic (EM) noise, leading to non-uniform deposition and formation of gaps in back end of line (BEOL) and middle end of line (MEOL) conductive structures, which reduces conductivity and device lifetime.
Innovation Solution
Implementing a magnetic shield in the deposition chamber to insulate against RF and EM noise, ensuring uniform copper deposition and reducing the formation of air gaps in BEOL and MEOL structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If copper deposition is performed using physical vapor deposition (PVD), then copper can be deposited for electrical connection, but the deposition is susceptible to redirection by RF and EM noise leading to non-uniform deposition and formation of gaps
Solution Approach 1:
A magnetic shield is introduced as an intermediary component between the copper source and the substrate. The magnetic shield blocks RF and EM noise from reaching the copper atoms during deposition, preventing their redirection and ensuring uniform copper layer formation without gaps in the conductive structures
Solution Approach 2:
The patent converts the harmful effect of RF and EM noise into a beneficial filtering process. By strategically placing magnetic shields in the deposition chamber, the previously problematic electromagnetic environment is transformed into a controlled setting where only beneficial copper deposition occurs, while harmful noise is selectively blocked
2Reliability
If no magnetic shield is used, then the deposition chamber structure is simpler, but copper atoms are redirected by external noise causing gaps and reduced conductivity
Solution Approach 1:
Magnetic shields are placed selectively in specific regions of the deposition chamber where RF and EM noise has the greatest impact on copper atom trajectories. This localized shielding approach ensures high conductivity in critical areas without unnecessarily complicating the entire chamber structure
Solution Approach 2:
The patent modifies the electromagnetic parameter environment within the deposition chamber by introducing magnetic shielding materials. This changes the magnetic field characteristics and RF noise levels in the deposition region, creating optimal conditions for uniform copper deposition and reliable conductive structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic shield enhances the uniformity of copper deposition, improving conductivity and extending the lifetime of electronic devices by minimizing air gaps in BEOL and MEOL structures.
Implementation Method 1
a magnetic shield configured to reduce electromagnetic noise within the chamber
Implementation Method 2
at least one electromagnet and at least one flow optimizer configured to direct copper ions from a copper target onto a wafer
Implementation Method 3
Copper deposition during physical vapor deposition (PVD)
Data Source
AI summary
A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.


