Copper PVD Chamber Shield Layout for Uniform BEOL Deposition
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Solution Overview
Problem
Copper atoms during physical vapor deposition (PVD) in semiconductor processing are susceptible to re-direction due to external noise such as RF and EM radiation, leading to less uniform deposition and formation of gaps in BEOL and MEOL conductive structures, which reduces conductivity and the lifetime of electronic devices.
Innovation Solution
A magnetic shield is installed in the copper deposition chamber to reduce external noise, with a thickness ranging from approximately 0.1 mm to 10 mm, providing sufficient protection against RF and EM signals. The shield can cover the entire chamber or a portion of it, adjacent to the electromagnets, to minimize noise interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If copper deposition is performed using PVD without shielding, then the deposition process can proceed without additional components, but copper atoms are re-directed by external noise leading to non-uniform deposition and gaps in conductive structures
Solution Approach 1:
A magnetic shield is introduced as an intermediary component between the external environment and the copper deposition chamber. The shield blocks RF and EM noise from reaching the copper atoms during deposition, preventing re-direction and ensuring uniform deposition without complicating the core PVD process
2Manufacturing precision
If a magnetic shield is added to the deposition chamber, then external noise is reduced and deposition uniformity improves, but the chamber structure becomes more complex
Solution Approach 1:
The magnetic shield is implemented as a thin-walled structure that provides effective noise blocking while minimizing structural complexity. The shield can be positioned around the deposition chamber or adjacent to electromagnets, forming a protective barrier without significantly increasing device complexity
3Reliability
If the magnetic shield covers the entire chamber, then maximum noise protection is achieved, but the device complexity and material usage increase
Solution Approach 1:
Instead of uniformly shielding the entire chamber, the magnetic shield is strategically positioned in areas where noise interference is most problematic, such as adjacent to electromagnets or at specific chamber locations. This localized approach provides sufficient protection while minimizing device complexity and material usage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic shield reduces noise-induced re-direction of copper atoms, resulting in more uniform deposition of BEOL and MEOL conductive structures. This enhances conductivity and improves the lifetime of electronic devices by minimizing gaps in the conductive structures, even in the presence of hardware failures during PVD.
Implementation Method 1
A magnetic shield is installed in the copper deposition chamber to reduce external noise
Implementation Method 2
Copper atoms during physical vapor deposition (PVD) in semiconductor processing
Implementation Method 3
at least one electromagnet that are configured to direct copper ions from a copper target onto a wafer
Data Source
AI summary
A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.