Cu-Based RRAM Buffer Layer Oxidation Prevention
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Solution Overview
Problem
Cu-based resistive random access memory devices face issues of low reliability and yield due to oxidation of the copper electrode interface during the growth of solid electrolyte materials, leading to rough electrode surfaces.
Innovation Solution
A compound buffer layer of Cu, Si, and N or Cu, Ge, and N is formed on the lower copper electrode through siliconization or germanidation treatments, preventing oxidation and improving the interface quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sputtering or thermal oxidation is used to grow solid electrolyte material on Cu electrode, then the solid electrolyte material can be deposited, but the Cu electrode surface oxidizes and becomes rough, resulting in low reliability and low device yield
Solution Approach 1:
A compound buffer layer comprising Cu-Si-O-N is formed between the Cu electrode and the solid electrolyte material. This intermediary layer prevents direct contact between the Cu electrode and oxygen during the sputtering or thermal oxidation process, thereby preventing oxidation of the Cu electrode surface while still allowing the solid electrolyte material to be deposited on top of it.
Solution Approach 2:
The compound buffer layer is formed on the Cu electrode surface before the solid electrolyte material deposition process. This preliminary action creates a protective barrier in advance that prevents oxidation during the subsequent sputtering or thermal oxidation steps, ensuring the Cu electrode surface remains smooth and reliable.
2Reliability
If a compound buffer layer is formed to prevent oxidation, then reliability improves, but the manufacturing process becomes more complex
Solution Approach 1:
The compound buffer layer integrates multiple protective functions into a single layer: it contains Cu from the electrode, Si from the sputtering process, O from oxidation, and N to stabilize the structure. This merging of elements creates a multifunctional buffer layer that prevents oxidation, maintains surface smoothness, and facilitates solid electrolyte deposition, thereby improving reliability without requiring multiple separate process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound buffer layer effectively prevents copper electrode oxidation, enhancing the reliability and yield of the memory devices by maintaining a smooth interface and reducing power consumption.
Implementation Method 1
performing composition and a chemical combination treatment on a lower copper electrode to generate a compound buffer layer, wherein the compound buffer layer is capable of preventing the oxidation of the lower copper electrode
Implementation Method 2
performing composition and a siliconization treatment on the lower copper electrode to generate the compound buffer layer of Cu, Si and N; or performing composition and the siliconization treatment on the lower copper electrode to generate the compound buffer layer of Cu, Ge and N
Data Source
AI summary
The present invention discloses a preparation method of a Cu-based resistive random access memory, and a memory. The preparation method includes: performing composition and a chemical combination treatment on a lower copper electrode (10) to generate a compound buffer layer (40), wherein the compound buffer layer (40) is capable of preventing the oxidation of the lower copper electrode (10); depositing a solid electrolyte material (50) on the compound buffer layer (40); and depositing an upper electrode (60) on the solid electrolyte material (50) to form the memory. In the above technical solution, the compound buffer layer (40) capable of preventing the oxidation of the lower copper electrode (10) is inserted between the lower copper electrode (10) and the solid electrolyte material (50) to efficiently prevent the oxidation of the lower copper electrode (10) in a growth process of the solid electrolyte material (50), such that an electrode interface does not become rough due to the oxidation, thereby solving the technical problem of relatively low reliability and yield of the device resulting from the rough electrode interface of the Cu-based resistive random access memory in the prior art, and thus the reliability and the yield of the device are improved.