Copper-Silicon Nitride Bonding With Controlled Mg-N Interface Phases

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Solution Overview

Problem

Insulated circuit boards face challenges in maintaining insulating properties under high current and voltage loads, particularly due to electric field concentration caused by Mg—N compound phases at bonded interfaces.

Innovation Solution

A copper-ceramic bonded body and insulated circuit board design with controlled Mg—N compound phases, where the maximum length is less than 100 nm and number density is less than 8 pieces/μm, along with silicon nitride phases and a glass phase to enhance bonding reliability and insulating properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If Mg is used as a bonding material between copper sheet and ceramic substrate, then bonding reliability is improved, but Mg—N compound phases form at the bonded interface causing electric field concentration and reducing insulating properties

Engineering Contradiction:
Improvebonding reliabilityVSAvoidelectric field concentration
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent controls the size and distribution parameters of Mg—N compound phases at the bonded interface. Specifically, it limits the maximum length of Mg—N compound phases to 100 μm or less and controls the number density to 8 pieces/μm or less in a 10-100 nm length range. By changing these dimensional parameters, the patent suppresses electric field concentration while maintaining the bonding reliability provided by Mg.

Inventive Principle:
Principle #35Parameter changes

2Power

If the insulated circuit board is loaded with large current and high voltage, then power handling capability is improved, but insulating properties of the ceramic substrate deteriorate due to electric field concentration

Engineering Contradiction:
Improvepower handling capabilityVSAvoidinsulating property degradation
Core Design Contradiction:
PowerVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter control to the Mg—N compound phases at the bonded interface, limiting their maximum length to 100 μm or less and controlling number density to 8 pieces/μm or less. This parameter optimization allows the insulated circuit board to handle large currents and high voltages without suffering from electric field concentration that would otherwise degrade insulating properties.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively suppresses electric field concentration and improves insulating properties, ensuring high bonding reliability and resistance to thermal cycles.

Implementation Method 1

a copper-ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of silicon nitride, the copper member and the ceramic member being bonded to each other

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Implementation Method 2

a maximum length of a Mg—N compound phase which is present at a bonded interface between the copper member and the ceramic member is less than 100 nm, and in a unit length along the bonded interface, the number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm

Methodology Applied
Scientific EffectElectric field distribution: Electric Field

Data Source

PatentUS12451404B2Copper-ceramic bonded body, insulated circuit board, method for producing copper-ceramic bonded body, and method for producing insulated circuit board
Publication Date: 2025.10.21 MITSUBISHI MATERIALS CORP
  • US12451404B2 patent drawing
  • US12451404B2 patent drawing
  • US12451404B2 patent drawing

AI summary

A copper-ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of silicon nitride, the copper member and the ceramic member being bonded to each other, in which a maximum length of a Mg—N compound phase which is present at a bonded interface between the copper member and the ceramic member is less than 100 nm, and in a unit length along the bonded interface, the number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.