Copper Surface Protection Composition for 3D Interconnect Oxidation
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Solution Overview
Problem
The rapid oxidation of copper surfaces during semiconductor manufacturing poses a significant challenge in 3D integration technology, inhibiting effective interconnection.
Innovation Solution
A composition for protecting copper surfaces containing specific copper surface protectants and a solvent, optionally with a pH adjusting agent, is applied to form a dense protective layer that prevents oxidation, allowing for prolonged storage and easy removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a galvanic pair with Mg is used to inhibit Cu oxidation, then Cu oxidation is inhibited, but the process complexity increases and Mg is consumed sacrificially
Solution Approach 1:
The patent introduces a copper surface protectant as an intermediary substance that forms a protective film on the copper surface. This protectant acts as a mediator between the copper surface and the oxidizing environment, preventing direct contact and oxidation without requiring sacrificial metals or complex galvanic pair setups.
Solution Approach 2:
The copper surface protectant is applied as a temporary protective layer that can be easily removed after serving its purpose. Unlike sacrificial Mg that is consumed and requires replacement, the protectant film is non-consumable during storage and can be completely removed before bonding, reducing material waste and process complexity.
2Productivity
If copper surface is exposed for interconnection, then interconnection can be formed, but rapid oxidation occurs inhibiting sufficient interconnection
Solution Approach 1:
The copper surface protectant is applied in advance to the copper surface before the interconnection process. This preliminary protective action allows the copper surface to be exposed and handled during manufacturing without fear of rapid oxidation, enabling sufficient interconnection time and processes to be performed safely.
Solution Approach 2:
The copper surface protectant creates an inert-like protective environment on the copper surface, similar to how an inert gas atmosphere would prevent oxidation. The protective film acts as a barrier that isolates the copper from oxygen, allowing the copper to remain exposed without oxidizing rapidly.
3Reliability
If copper surface is protected from oxidation, then oxidation is prevented, but the protective layer must be removed for bonding
Solution Approach 1:
The copper surface protectant is designed with specific chemical properties (pH range 2-12, particular molecular structure with R groups) that allow it to be easily removed under controlled conditions. The protective film's composition parameters are optimized to enable simple removal processes such as washing with dilute acid or base solutions, making the bonding process easy while maintaining oxidation protection during storage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively prevents copper oxidation, enabling stable semiconductor production with suitable interconnection and prolonged storage of semiconductor intermediates.
Implementation Method 1
containing: at least one copper surface protectant selected from a group consisting of compounds represented by formulae (1) to (3) and salts thereof
Data Source
AI summary
Provided are a composition for protecting a copper surface, a method for producing a semiconductor intermediate using the composition, and a method for producing a semiconductor using the composition. The composition contains a solvent and at least one copper surface protectant chosen from compounds represented by formulae (1) to (3) below and salts thereof: