Copper Wire Bonding for RF Power Amplifier Thermal Cycling

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Solution Overview

Problem

Power amplifier electronics components used in RF cooking ovens experience unexpected failures due to thermal stresses caused by power cycling between high and low powers, despite being robust in other applications, and initial solutions like increasing wire size only exacerbate the issue by introducing resonant frequencies.

Innovation Solution

The use of copper bonding wires with diameters between 10 microns and 100 microns, along with a learning procedure that generates power cycling between high and low powers, helps in impedance matching and reduces thermal stress, improving the reliability of power amplifier electronics in the oven environment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If copper bonding wires with diameter between 10-100 microns are used to connect semiconductor die to output matching network, then thermal stress resistance is improved and reliability is enhanced, but manufacturing precision requirements increase due to the small wire diameter

Engineering Contradiction:
Improvepower amplifier electronics reliabilityVSAvoidbonding wire diameter control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent changes the material parameter from conventional aluminum bonding wires to copper bonding wires with specific diameter range (10-100 microns). This parameter change provides lower electrical resistance and better thermal conductivity, which reduces thermal stress during power cycling operations and enhances the reliability of power amplifier electronics in RF cooking ovens.

Inventive Principle:
Principle #35Parameter changes

2Strength

If larger bonding wires are used to reduce thermal stress, then strength is improved, but resonant frequencies are introduced that worsen RF performance

Engineering Contradiction:
Improvebonding wire thermal stress resistanceVSAvoidresonant frequencies
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The patent optimizes the bonding wire diameter to a specific range (10-100 microns) that balances mechanical strength for thermal stress resistance with electrical properties to avoid resonant frequencies. This parameter optimization ensures the wires are thin enough to minimize RF resonance while maintaining sufficient strength to withstand thermal cycling between high and low power states.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly enhances the durability and performance of power amplifier electronics in RF cooking ovens by reducing thermal stress and increasing the number of power cycles without failure, while maintaining efficient RF energy application.

Implementation Method 1

copper bonding wires having a diameter of between about 10 microns and about 100 microns

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

reducing thermal stress on an intermittently operable chipset controlling RF application for cooking

Methodology Applied
Scientific EffectThermal stress reduction: Thermal Shock

Data Source

PatentEP3884516B1Copper wire bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking
Publication Date: 2024.07.31 ILLINOIS TOOL WORKS INC
  • EP3884516B1 patent drawingFigure 1
  • EP3884516B1 patent drawingFigure 2
  • EP3884516B1 patent drawingFigure 3

AI summary

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding wires may be copper bonding wires having a diameter of between about 10 microns and about 100 microns.