Copper Conducting Wire Structure for TFT-LCDs
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Solution Overview
Problem
The poor adhesion between copper and glass in copper conducting wire structures for TFT-LCDs results in reduced bonding strength and electric conductivity.
Innovation Solution
A copper nitride buffer layer is formed between the copper layer and the glass substrate to enhance bonding strength, with the option of a copper alloy layer between the copper and buffer layer to stabilize the buffer layer and improve conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper layer is directly formed on glass substrate, then electric conductivity is improved, but bonding strength deteriorates due to poor adhesion
Solution Approach 1:
A buffer layer comprising copper nitride is introduced between the copper layer and glass substrate. This intermediary layer acts as a mediator that chemically bonds with both the copper layer and glass substrate, resolving the adhesion problem while preserving the electrical conductivity pathway through the copper structure.
Solution Approach 2:
The patent employs a composite structure consisting of multiple materials: glass substrate, copper nitride buffer layer, and copper conducting layer. This composite material approach allows each layer to perform its specific function - the glass provides structural support, the copper nitride provides adhesion, and the copper provides conductivity, thereby resolving the contradiction between bonding strength and electric conductivity.
2Ease of manufacture
If copper layer is directly formed on glass substrate, then manufacturing process is simplified, but adhesion deteriorates
Solution Approach 1:
The copper nitride buffer layer serves as a thin intermediary that can be deposited using standard sputtering processes. While it adds one additional layer, the deposition process integrates seamlessly with existing manufacturing workflows, maintaining ease of manufacture while dramatically improving adhesion reliability.
3Strength
If buffer layer is added between copper and glass, then bonding strength is improved, but device complexity increases
Solution Approach 1:
The buffer layer is applied locally only at the interface between copper and glass where adhesion is needed, rather than throughout the entire device structure. This localized approach improves bonding strength at the critical interface while minimizing the overall structural complexity and material usage.
Solution Approach 2:
The buffer layer thickness is optimized to be thin (typically nanometer scale), changing the dimensional parameter to provide sufficient adhesion functionality without significantly increasing structural complexity. The copper nitride composition parameter is specifically selected to achieve both adhesion and electrical compatibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The copper nitride buffer layer significantly improves the bonding strength and conductivity of the copper conducting wire structure, addressing the adhesion issues and enhancing the performance of TFT-LCD devices.
Implementation Method 1
the poor adhesion between copper and glass results in a poor bonding strength between the patterned copper layer and the glass substrate
Implementation Method 2
a copper layer is sputtered on a glass substrate
Data Source
AI summary
A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.