Cleaning Composition for Copper Wiring in Semiconductor Manufacturing
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Solution Overview
Problem
Current cleaning solutions for semiconductor devices with copper wiring fail to effectively remove etching residues without damaging the wiring, prevent corrosion of copper, and easily remove corrosion inhibitors before applying a diffusion preventive film, leading to inferior device performance.
Innovation Solution
A composition combining specific pyrazole derivatives, triazole derivatives, amino carboxylic acids, or disulfide compounds with cleaning agents like ammonium fluoride and acetic acid, which provides cleaning properties, corrosion resistance, and easy removal of corrosion inhibitors through a heating treatment under reduced pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cleaning solution is used to remove etching residues from copper wiring, then the cleaning effectiveness is improved, but the copper wiring becomes susceptible to corrosion and denaturation
Solution Approach 1:
A corrosion inhibitor component is introduced as an intermediary substance that mediates between the cleaning agent and copper wiring. The cleaning agent removes etching residues while the corrosion inhibitor forms a protective layer on the copper surface, preventing direct contact between the cleaning solution and copper, thus eliminating corrosion damage while maintaining cleaning effectiveness
Solution Approach 2:
The cleaning solution is formulated as a composite composition containing multiple components: cleaning agents for residue removal, corrosion inhibitors for protection, and chelating agents for metal ion control. This composite formulation enables the solution to simultaneously perform cleaning, protection, and corrosion prevention functions that single-component solutions cannot achieve
2Reliability
If a corrosion inhibitor is applied to protect exposed copper, then the corrosion resistance is improved, but the diffusion preventive film adhesion deteriorates
Solution Approach 1:
The corrosion inhibitor is applied preliminarily to protect exposed copper wiring after cleaning. This preliminary protection prevents corrosion during subsequent processing steps. The protective layer is designed to be temporary and removable, allowing subsequent diffusion preventive film deposition to achieve strong adhesion to the copper surface
Solution Approach 2:
The patent controls the concentration and type of corrosion inhibitor, as well as the drying conditions, to optimize the balance between corrosion protection and film adhesion. By adjusting these parameters, the corrosion inhibitor layer provides sufficient protection during processing while allowing subsequent films to adhere properly to the copper surface
3Ease of manufacture
If ultrapure water is used for rinsing after cleaning, then the cleaning process is simplified, but copper corrosion occurs due to weak acidity
Solution Approach 1:
The corrosion inhibitor component acts as an intermediary that protects copper wiring during the ultrapure water rinsing process. It forms a protective barrier that prevents the weakly acidic ultrapure water from corroding the copper, enabling the use of simple ultrapure water rinsing without compromising copper integrity
Solution Approach 2:
The corrosion inhibitor in the cleaning solution provides self-protection functionality during the rinsing process. As the cleaning solution dries or is rinsed with ultrapure water, the corrosion inhibitor remains on the copper surface and automatically provides corrosion protection, eliminating the need for additional protective measures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes etching residues, prevents copper corrosion, and easily removes corrosion inhibitors, ensuring a clean copper surface for the diffusion preventive film, thereby enhancing the quality and precision of semiconductor devices.
Implementation Method 1
a cleaning agent component... which in a step of manufacturing a semiconductor device or a display device, is capable of removing an etching residue on the surface of a material to be treated
Implementation Method 2
a corrosion inhibitor component... preventing the denaturation of a metallic wiring containing copper or a copper alloy
Implementation Method 3
a heating treatment under reduced pressure... easily removing a corrosion inhibitor adhered onto the metallic wiring
Implementation Method 4
removing a corrosion inhibitor adhered onto the metallic wiring
Data Source
AI summary
A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.