Core-Shell Semiconductor Nanoparticles with Phosphorus Surface Passivation

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Solution Overview

Problem

Existing semiconductor nanoparticles struggle to achieve high quantum yield and band-edge emission, which are essential for efficient light-emitting devices.

Innovation Solution

The development of core-shell semiconductor nanoparticles, where the core contains a ternary semiconductor with specific elements like Ag, In, and S, and the shell is composed of a Group 13 and Group 16 semiconductor with a greater band-gap energy, and is surface-modified with a compound containing phosphorus with a negative oxidation number.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional semiconductor nanoparticles are used, then the structure is simple, but the quantum yield and band-edge emission are insufficient

Engineering Contradiction:
Improvequantum yieldVSAvoidparticle structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The semiconductor particle is divided into a core and a shell structure. The core contains the active semiconductor material (e.g., AgInS2) while the shell provides protective and functional properties. This segmentation allows optimization of each component independently, achieving high quantum yield through the core's band-edge emission while the shell maintains structural integrity and surface properties.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs composite semiconductor structures combining different materials with complementary properties. The core-shell configuration integrates materials with appropriate band gaps, where the core material provides strong band-edge emission and the shell material offers surface passivation and stability, resulting in enhanced overall performance with quantum yield exceeding 50%.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If the shell band-gap energy is increased, then the band-edge emission purity is improved, but the manufacturing complexity increases

Engineering Contradiction:
Improveband-edge emission purityVSAvoidshell material selection
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent optimizes the shell material's band-gap energy parameter to be greater than that of the core material. By carefully selecting shell materials (such as ZnS, CdS, or their alloys) with specific band-gap values, the configuration achieves pure band-edge emission from the core while maintaining feasible manufacturing conditions through established synthesis methods.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

Different regions of the particle are assigned different material properties: the core region contains materials optimized for band-edge emission, while the shell region contains materials with higher band-gap energy optimized for surface passivation and emission purity. This local differentiation of material quality enables simultaneous achievement of high emission purity and manufacturability.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the quantum yield and purity of band-edge emission, leading to more efficient light emission and improved performance in light-emitting devices.

Implementation Method 1

core-shell semiconductor nanoparticles that emits light when irradiated with light

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS12221574B2Core-shell semiconductor nanoparticles, production method thereof, and light-emitting device
Publication Date: 2025.02.11 NICHIA CORP
  • US12221574B2 patent drawing
  • US12221574B2 patent drawing
  • US12221574B2 patent drawing

AI summary

Provided are core-shell semiconductor nanoparticles, each including a core and a shell disposed on a surface of the core, and emitting light when irradiated with light. The core contains a semiconductor containing M1, M2, and Z, M1 containing at least one selected from the group consisting of Ag, Cu, and Au, M2 containing at least one selected from the group consisting of Al, Ga, In, and Tl, and Z containing at least one selected from the group consisting of S, Se, and Te. The shell contains a semiconductor containing a Group 13 element and a Group 16 element, and having a greater band-gap energy than the core. The shell has a compound containing a Group 15 element disposed on a surface of the shell, and the Group 15 element containing at least P with a negative oxidation number.