Coreless Cavity Substrates for High-Density Chip Packaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current multi-chip packaging techniques are inefficient and costly due to the need for drilling and filling vias one at a time, which limits production speed and increases package height and complexity, while also being unsuitable for large-scale manufacture.
Innovation Solution
A coreless cavity substrate manufacturing technique involving a copper base with alternating copper and insulating layers, where vias and features are formed in parallel using photoresist and electroplating processes, eliminating the need for mechanical drilling or laser ablation, and allowing for high-yield, compact, and reliable packaging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical drilling or laser ablation is used to form vias, then via formation is achieved, but production speed is limited and manufacturing cost increases
Solution Approach 1:
The patent replaces mechanical drilling and laser ablation with an electrochemical etching process. A copper base is etched using electrochemical methods to form vias and cavities, eliminating the need for mechanical or thermal systems. This substitution enables parallel processing of multiple vias simultaneously, dramatically increasing production speed while reducing manufacturing costs through a simpler, more scalable process.
2Manufacturing precision
If vias are drilled and filled one at a time, then via formation is achieved, but production time increases and throughput decreases
Solution Approach 1:
The patent merges multiple via formation operations into a single parallel electrochemical etching process. All vias and cavities are formed simultaneously through one etching step rather than sequentially drilling and filling each via individually. This merging of operations maintains precise via formation through controlled electrochemical parameters while dramatically increasing production throughput by processing all features in parallel.
3Adaptability or versatility
If complex chip to chip interconnection techniques are used, then multi-layer chip packaging is achieved, but package height increases and complexity increases
Solution Approach 1:
The patent transitions from planar interconnections to three-dimensional vertical interconnections by forming cavities and stacked structures. Multiple chip layers are interconnected through vertical vias and cavities etched through the substrate, enabling compact multi-layer packaging. This dimensional change allows complex interconnections to be achieved with simpler, more direct vertical pathways rather than complex lateral routing, reducing overall package height and interconnection complexity.
4Reliability
If through plated vias are used for interlayer connections, then electrical connectivity is achieved, but production becomes time-consuming and expensive
Solution Approach 1:
The patent replaces the multi-step mechanical and chemical process of drilling, plating, and filling vias with a single electrochemical etching process. The copper base is etched to form vias and cavities in one operation, eliminating the need for sequential drilling, plating, and filling steps. This substitution maintains reliable electrical connectivity through precise electrochemical control while dramatically improving production efficiency and reducing manufacturing costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of compact, reliable, and cost-effective multi-chip packages with reduced interconnect traces and via lengths, suitable for large-scale manufacture, while minimizing production time and optimizing throughput.
Implementation Method 1
a copper base is etched to form vias and cavities
Implementation Method 2
Alternating copper and insulating layers are deposited
Data Source
AI summary
A method for fabricating an IC support for supporting a first IC die connected in series with a second IC die; the IC support comprising a stack of alternating layers of copper features and vias in insulating surround, the first IC die being bondable onto the IC support, and the second IC die being bondable within a cavity inside the IC support, wherein the cavity is formed by etching away a copper base and selectively etching away built up copper.


