Corner Charge Transfer Layout Using Doping Gradient

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

In solid-state imaging devices, increasing the number of transfer electrodes in the corner register to ensure efficient electric charge transfer leads to complex structures, reduced yield, and potential power consumption issues, while decreasing their number can result in insufficient charge transfer on the outer sides of electrodes.

Innovation Solution

A photoelectric conversion device with a transfer part that includes a first and second transfer region, and a third transfer region with a semiconductor region having a higher impurity concentration, where the third line deviates from the first and second lines, allowing electric charge to be transferred efficiently without the need for a large number of transfer electrodes, by forming an electric potential gradient.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the number of transfer electrodes in the corner register is increased to ensure efficient electric charge transfer, then the reliability of charge transfer is improved, but the device complexity and manufacturing yield deteriorate

Engineering Contradiction:

Improveelectric charge transfer efficiencyVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the impurity concentration parameter of the semiconductor region in the corner register to a higher level (second impurity concentration higher than first impurity concentration), which enhances the electric potential gradient and improves charge transfer efficiency without requiring additional transfer electrodes, thus avoiding increased device complexity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical/electrical system of using multiple transfer electrodes with a semiconductor region-based electric potential gradient system. By creating a specialized semiconductor region with higher impurity concentration, the system uses electric field effects rather than physical electrode structures to achieve charge transfer, reducing device complexity while maintaining transfer reliability

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

Engineering Contradiction:

Improveelectric charge transfer efficiencyVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

By changing the impurity concentration parameter to create a higher concentration region, the patent establishes a more efficient electric potential gradient that reduces the energy required for charge transfer compared to using multiple transfer electrodes, thereby reducing power consumption while maintaining transfer reliability

Inventive Principle:

Principle #35Parameter changes

3Reliability

Engineering Contradiction:

Improveelectric charge transfer efficiencyVSAvoidmanufacturing yield

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent uses parameter change (impurity concentration) to create a functional semiconductor region that achieves charge transfer without additional electrodes, simplifying the manufacturing process and improving yield while maintaining transfer efficiency

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent extracts the charge transfer function from the transfer electrode system and implements it through the semiconductor region's electric potential gradient, removing the need for additional electrodes and their associated manufacturing complexity, thus improving manufacturing yield

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables reliable electric charge transfer while avoiding the increase in the number of transfer electrodes, preventing yield reduction, power consumption issues, and ensuring smooth direction changes in electric charge transfer.

Implementation Method 1

an electric potential gradient (potential energy gradient) in which electric charge moves from the first transfer region side to the second transfer region side along the third line is formed in the third transfer region

Methodology Applied

Scientific EffectElectric potential gradient: Electric Field

Data Source

PatentUS20240030270A1Photoelectric conversion device

Publication Date: 2024.01.25 HAMAMATSU PHOTONICS KK

AI summary

A transfer part of a photoelectric conversion device includes a first transfer region configured to transfer electric charge along a first line, a second transfer region configured to transfer the electric charge along a second line, a third transfer region configured to transfer the electric charge along a third line, a first transfer electrode, and a second transfer electrode. The third line is deviated from at least one of the first line and the second line. The third transfer region includes a first semiconductor region having a first impurity concentration, and a second semiconductor region having a second impurity concentration higher than the first impurity concentration. The second semiconductor region extends along the third line to be widened on the second transfer region side. The first semiconductor region is disposed on both sides of the second semiconductor region.