Corrected Transfer Mask for Semiconductor Photolithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for forming a concave-convex shape on a semiconductor substrate are prone to inaccuracies, leading to poor growth of semiconductor layers, resulting in reduced external quantum efficiency and reliability due to voids and crystal defects, which in turn affect the luminous efficiency and crystallinity of light-emitting elements.
Innovation Solution
A method involving the use of a corrected light shielding pattern on a transfer mask to prevent deformation during photolithography, allowing for precise formation of a concave-convex structure on the substrate, which enables accurate epitaxial growth of semiconductor layers and reduces the occurrence of voids and crystal defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography is used to form concave-convex structure on substrate, then manufacturing process is simple, but pattern deformation occurs due to multiple exposure leading to poor manufacturing precision
Solution Approach 1:
The invention applies preliminary action by pre-correcting the mask pattern design to compensate for expected exposure variations. The mask is designed with intentionally modified dimensions in regions that will undergo multiple exposure, so that after exposure and development, the final resist pattern achieves the desired geometry without deformation.
Solution Approach 2:
The invention changes the geometric parameters of the mask pattern based on the number of exposures each region will receive. By adjusting the mask pattern dimensions and positions according to the cumulative exposure dose, the final developed pattern maintains the intended shape and size despite multiple exposure events.
2Reliability
If concave-convex structure is formed on substrate to scatter light, then external quantum efficiency is improved, but pattern deformation causes voids and crystal defects reducing reliability
Solution Approach 1:
The mask pattern is pre-corrected to anticipate and compensate for the cumulative exposure effects that would otherwise cause pattern deformation. This preliminary correction ensures that the resist develops into the intended concave-convex pattern, providing a reliable template for subsequent semiconductor layer growth without voids or defects.
Solution Approach 2:
The invention incorporates feedback by using exposure simulation and calculation to determine the appropriate mask pattern modifications. The exposure distribution is analyzed, and the mask design is adjusted based on this feedback to achieve the desired final pattern accuracy.
3Manufacturing precision
If light shielding pattern is not corrected for multiple exposure, then manufacturing process is simple, but external quantum efficiency is reduced due to pattern deformation
Solution Approach 1:
The mask design incorporates preliminary corrections for multiple exposure regions, allowing the photolithography process to directly produce accurate patterns without requiring additional processing steps. This maintains productivity while achieving the desired manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the external quantum efficiency and reliability of light-emitting elements by ensuring accurate formation of the concave-convex structure, preventing deformation and maintaining high accuracy in photolithography processing without adding additional manufacturing steps, thus improving the overall performance and cost-effectiveness.
Implementation Method 1
a step of forming a resist mask on the surface of the substrate by a photolithography process; and a step of selectively etching the substrate using the resist mask
Implementation Method 2
a step of selectively etching the substrate using the resist mask to form the concave-convex structure on the surface of the substrate
Implementation Method 3
epitaxially growing a semiconductor layer above the substrate so that the concave-convex structure is buried
Data Source
AI summary
In forming an etching mask for forming a repetitive concave-convex pattern on a surface of a substrate of a semiconductor base material by exposure development of a resist film, the present invention prevents a development pattern from being deformed due to excessive exposure on a part where exposure regions are adjacent to each other in the resist film by repetitive exposure. In a method for manufacturing a semiconductor base material, when forming an etching mask for forming a concave-convex portion on a surface of the semiconductor base material, by a photolithography process of the resist film, a transfer mask is used, as a transfer mask 100, which is obtained by previously correcting the size of a dotted light shielding section 104 which is an exposure pattern near a region on which exposure shots overlap.