Correlated Beam Inspection for Dimensional, Material, and Electrical Analysis

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Solution Overview

Problem

Existing inspection methods struggle to analyze correlations between multiple characteristics, such as dimensions, electrical, and material characteristics, at the same location due to differing spatial resolutions of energy sources.

Innovation Solution

An inspection system utilizing an inspection beam and multiple working beams to irradiate a sample, detecting secondary charged particles, and a computer system to generate images and acquire feature values from these beams, enabling correlation analysis at the same location.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple different measurement methods (SEM, contact probe, optical) are used to measure different characteristics, then various characteristics can be measured, but it becomes difficult to analyze correlations at the same location due to different spatial resolutions

Engineering Contradiction:
Improvemeasurement capabilityVSAvoidspatial resolution consistency
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The patent combines multiple measurement methods (SEM, contact probe, optical) into a single integrated measurement system that can perform all measurements at the same location with consistent spatial resolution, enabling correlation analysis between different characteristics

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent creates a universal measurement system that can perform multiple types of measurements (dimensional, electrical, material characteristics) using a single device with unified spatial resolution, making the system adaptable to various measurement needs while maintaining precision consistency

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If different measurement methods are applied to different processes, then process-specific measurements can be performed, but it becomes difficult to trace characteristic changes between processes

Engineering Contradiction:
Improveprocess applicabilityVSAvoidtraceability of characteristic changes
Core Design Contradiction:
Adaptability or versatilityVSLoss of information

Solution Approach 1:

The patent integrates multiple measurement capabilities into a single system that can consistently measure all characteristics across different processes, enabling continuous tracing of characteristic changes from one process to another without information loss

Inventive Principle:
Principle #5Merging (Combining)

3Measurement precision

If multiple energy sources and detector systems are used for non-contact measurement, then CD and overlay can be measured from electrical and material characteristics, but it becomes extremely difficult to analyze correlations at the same location due to different spatial resolutions of energy sources

Engineering Contradiction:
Improvemeasurement accuracyVSAvoidsystem configuration
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent merges multiple measurement functions into a single integrated system with unified spatial resolution, eliminating the need for separate energy sources and detector systems while maintaining the ability to measure various characteristics at the same location

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Facilitates easier analysis of correlations between dimensions, electrical, and material characteristics at the same location, allowing for defect detection and process monitoring in semiconductor devices.

Implementation Method 1

an inspection beam irradiation system that irradiates a sample with an inspection beam which is a charged particle beam

Methodology Applied
Scientific EffectCharged particle beam irradiation: Electron Beam

Implementation Method 2

a detector that detects secondary charged particles obtained by irradiating the sample with the inspection beam

Methodology Applied
Scientific EffectSecondary charged particle emission: Cathodoluminescence

Implementation Method 3

a first working beam irradiation system that emits a first working beam for changing an amount of the secondary charged particles

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 4

a second working beam irradiation system that emits a second working beam for changing the amount of the secondary charged particles

Methodology Applied
Scientific EffectElectron beam irradiation: Electron Beam

Data Source

PatentUS12609269B2Inspection system
Publication Date: 2026.04.21 HITACHI HIGH TECH CORP
  • US12609269B2 patent drawing
  • US12609269B2 patent drawing
  • US12609269B2 patent drawing

AI summary

This inspection system 100 comprises: an electron source 102 which irradiates a sample 200 with an inspection beam; a detector 105 which detects secondary electrons obtained by irradiating the sample 200 with the inspection beam and outputs a detection signal; a laser device 107 which emits an action laser that changes the amount of secondary electrons; an electron gun 106 which emits an action electron beam that changes the amount of secondary electrons; and a computer system 140 which generates an image of the sample 200 on the basis of the detection signal. The computer system 140 generates an inspection image I1 related to the emission of the inspection beam, acquires the dimensions and the like related to a pattern on the sample 200 on the basis of the inspection image I1, generates an inspection image I2 related to the emission of the action laser and the inspection beam, acquires the material characteristics related to the pattern on the basis of the inspection image I2, generates an inspection image I3 related to the emission of the action electron beam and the inspection beam, and acquires the electrical characteristics related to the pattern on the basis of the inspection image I3.