Corundum-Structure Gallium Oxide Semiconductor Device
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving high-quality crystal growth on heterogeneous substrates due to issues like cracks, dislocations, and unsatisfactory deposition speed, which hinder the increase in substrate diameter or thickness, particularly for gallium oxide-based semiconductors with a corundum structure.
Innovation Solution
A semiconductor device is designed with a semiconductor layer having a corundum structure and a c-axis orientation, utilizing a mist CVD method for epitaxial crystal growth, where the semiconductor layer includes metal oxides like gallium, indium, and iridium, and is configured to allow current flow in a specific direction, enhancing electrical characteristics and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition methods are used for crystal growth on heterogeneous substrates, then deposition can be achieved, but cracks, dislocations, and distortion occur reducing crystal quality
Solution Approach 1:
A buffer layer is introduced as an intermediary between the heterogeneous substrate and the semiconductor layer. This buffer layer mediates the lattice mismatch and thermal expansion differences, preventing cracks and dislocations from forming in the semiconductor layer while enabling high-quality crystal growth.
Solution Approach 2:
The patent changes the deposition parameters by using mist CVD method with specific temperature control and gas flow conditions. By optimizing deposition temperature, pressure, and precursor ratios, the patent achieves high-quality epitaxial growth without the harmful effects of conventional methods.
2Productivity
If conventional deposition methods are used, then crystal growth can be achieved, but deposition speed is unsatisfactory hindering productivity
Solution Approach 1:
The patent replaces conventional thermal field-based deposition with a mist CVD method that uses chemical vapor deposition mechanisms. This substitution enables faster deposition speeds while maintaining high epitaxial film quality through controlled chemical reactions in the vapor phase.
Solution Approach 2:
By changing deposition parameters including temperature, pressure, and using mist-form precursors, the patent achieves both high deposition speed and high manufacturing precision. The mist CVD method allows rapid film formation with excellent crystal quality.
3Length of stationary object
If substrate diameter or thickness is increased, then device performance should improve, but cracks and dislocations occur preventing scaling
Solution Approach 1:
The buffer layer acts as a mediator that accommodates thermal expansion differences and lattice mismatches when substrate diameter and thickness are increased. This allows scaling to larger substrates without compromising integrity or generating harmful defects.
4Reliability
If gallium oxide with corundum structure is deposited, then wide band gap properties are achieved, but deposition is difficult requiring particular methods
Solution Approach 1:
The patent uses mist CVD method to replace difficult conventional deposition techniques for forming gallium oxide with corundum structure. This method achieves the desired wide band gap properties while significantly improving ease of manufacture through a more controllable and efficient deposition process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device exhibits improved electrical characteristics, increased withstand voltage, and enhanced heat dissipation, effectively addressing the limitations of conventional methods by achieving high-quality epitaxial growth and anisotropy in current flow.
Implementation Method 1
a semiconductor device which causes a current to flow in the semiconductor layer in a first direction along with an interface between the semiconductor layer and the gate electrode
Implementation Method 2
utilizing a mist CVD method for epitaxial crystal growth
Data Source
AI summary
Provided is a semiconductor device including; at least a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of a c-axis in the semiconductor layer being the first direction.