Corundum Oxide Semiconductor Laminate With Low-Resistivity Doping
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Solution Overview
Problem
The electric resistivity of α-gallium oxide semiconductor films is insufficient for high-performance semiconductor devices, making it difficult to form devices with high breakdown voltage, low loss, and high heat resistance.
Innovation Solution
A laminate comprising a crystal substrate with a semiconductor film made of an oxide semiconductor containing a dopant, such as tin or silicon, with a silicon concentration of 5.0×10^20 cm^-3 or less, achieving a resistivity of 150 mΩ·cm or less, and a film forming method using a mist CVD process with a non-silicone resin conveyor to prevent silicon contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dopant doping is applied to α-gallium oxide to provide charge carriers, then electrical conductivity is improved, but electric resistivity remains insufficient for high-performance semiconductor devices
Solution Approach 1:
The patent changes the chemical composition parameters by introducing specific dopants (Ge, Si, Sn) at controlled concentrations into the α-gallium oxide lattice. This modifies the electrical properties by providing charge carriers while maintaining the corundum structure, achieving resistivity values suitable for semiconductor devices (150 mΩ·cm or less)
2Reliability
If silicon is used as a dopant to improve electrical properties, then charge carrier density increases, but silicon contamination causes defects and degrades semiconductor performance
Solution Approach 1:
The patent applies local quality control by carefully controlling the silicon concentration in specific ranges (5.0×10^20 cm^-3 or less) to achieve beneficial electrical properties while avoiding harmful defect formation. Different regions of the semiconductor device can have optimized dopant concentrations tailored to their specific functional requirements
Solution Approach 2:
The patent creates a composite doping strategy by combining multiple dopants (Ge, Si, Sn) in the oxide semiconductor. This composite approach allows the material to benefit from the charge carrier contribution of silicon while the presence of other dopants and precise concentration control prevents silicon-induced defects from dominating the material properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a semiconductor film with improved electrical properties, including carrier mobility and density, suitable for high-performance semiconductor devices with low resistivity, high breakdown voltage, low loss, and high heat resistance, while preventing silicon-induced defects.
Implementation Method 1
Mist Chemical Vapor Deposition (Mist CVD. Hereinafter, this method may also be referred to as "mist CVD method") has been developed by which crystal is grown on a substrate using a raw material atomized into a mist form.
Implementation Method 2
The raw-material mist is allowed to react, so that a single-orientation gallium oxide thin film is epitaxially grown on the substrate.
Implementation Method 3
a film forming method using a mist CVD process with a non-silicone resin conveyor to prevent silicon contamination
Data Source
AI summary
A laminate including: a crystal substrate; and a semiconductor film provided on a main surface of the crystal substrate, the semiconductor film being mainly made of an oxide semiconductor containing a dopant and having a corundum structure, where the oxide semiconductor has a silicon concentration of 5.0×1020 cm−3 or less, and the semiconductor film has a resistivity of 150 mΩ·cm or less. This provides a laminate including a semiconductor having low resistance and a corundum structure suitable for use in semiconductor devices.