Corundum Oxide Multilayer Structure for Low-Leakage Power Devices
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Solution Overview
Problem
Conventional electrodes for semiconductor devices using α-Ga2O3 as a semiconductor material fail to function as Schottky or ohmic electrodes, leading to issues such as leakage current and impaired semiconductor characteristics.
Innovation Solution
A multilayer structure comprising a semiconductor film with a corundum structure and containing crystalline oxide semiconductors from groups 9 and 13 of the periodic table, combined with an insulator film having a taper angle of 20° or less, which reduces stress concentration and prevents crystal defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrodes (Ti/Au, Al/Ni/Au) are applied to α-Ga2O3 semiconductor, then electrode bonding is achieved, but leakage current occurs and semiconductor characteristics are impaired
Solution Approach 1:
The invention changes the material parameters by selecting specific metals from groups 9 and 13 of the periodic table for the semiconductor film, and changes the geometric parameter by controlling the taper angle of the insulator film to 20° or less. These parameter changes eliminate leakage current while maintaining proper electrode functionality, resolving the contradiction between reliability and harmful factors.
Solution Approach 2:
The insulator film is designed with a specific local geometric quality (taper angle ≤20°) at the critical interface region with the semiconductor. This localized geometric feature prevents stress concentration and eliminates leakage current paths at the electrode edges, while the rest of the device structure remains conventional.
2Ease of manufacture
If insulator film with large taper angle is used, then manufacturing is easier, but stress concentration occurs and crystal defects are generated in semiconductor film
Solution Approach 1:
The invention specifies a critical parameter threshold for the insulator film taper angle (≤20°) that balances manufacturability with semiconductor quality. This parameter change prevents stress concentration and crystal defects in the semiconductor film while remaining achievable with standard fabrication techniques, resolving the contradiction between ease of manufacture and manufacturing precision.
Data Source
AI summary
Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.