Corundum Oxide Semiconductor Channel for P-Type Conductivity
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Solution Overview
Problem
Current methods for forming p-type gallium oxide-based semiconductor devices face challenges in achieving effective p-type conductivity, high mobility, and suitable electrical properties for power and LED applications, with existing materials like Rh2O3 and ZnRh2O4 exhibiting low concentration issues and inadequate performance.
Innovation Solution
A semiconductor device with an inversion channel region containing a corundum structure mixed crystal, where the oxide film includes phosphorus and a p-type dopant, enhancing the semiconductor's electrical conductivity and mobility, and allowing for the formation of a p-type semiconductor with improved properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Rh2O3 or ZnRh2O4 is used as a p-type semiconductor, then the band gap is wide enough for power devices, but the raw material concentration is low and mobility is insufficient
Solution Approach 1:
The patent changes the compositional parameters by using Ir2O3 instead of Rh2O3 or ZnRh2O4, achieving higher raw material concentration and improved p-type conductivity while maintaining wide band gap properties suitable for power devices
Solution Approach 2:
The patent employs composite material strategy by forming a p-n junction with n-type α-Ga2O3 and p-type Ir2O3 layers, combining materials with complementary properties to achieve both high conductivity and wide band gap characteristics
2Ease of manufacture
If delafossite or oxychalcogenide is used as a p-type semiconductor, then the material can be formed, but the mobility is as low as 1 cm2/Vs or less and electrical properties are insufficient
Solution Approach 1:
The patent changes the material parameter from delafossite or oxychalcogenide to Ir2O3, achieving significantly higher electrical mobility while maintaining manufacturability through established oxide semiconductor fabrication processes
3Reliability
If p-type dopant is introduced into gallium oxide, then p-type conductivity is achieved, but the conductivity and mobility remain insufficient for practical applications
Solution Approach 1:
The patent changes the dopant material from conventional p-type dopants to Ir2O3, achieving superior p-type conductivity and mobility that meet practical application requirements for power devices
Solution Approach 2:
The patent uses composite material approach by creating a p-n junction structure that combines n-type gallium oxide with p-type Ir2O3, achieving enhanced electrical properties through material composition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves suppressed leakage current and enhanced electrical properties, making it suitable for high withstand voltage, low loss, and high temperature resistance applications, such as power devices.
Implementation Method 1
the oxide film contains at least one element selected from elements of Group 15 in the periodic table... the at least one element is phosphorus
Data Source
AI summary
A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.