Counter-Electrode Array for Multi-Beam Pattern Definition
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Solution Overview
Problem
Existing multi-beam pattern definition devices for particle-beam processing and inspection face challenges in providing high circuitry integration and mechanical support for electrostatic deflector electrodes, leading to limitations in aspect ratio and yield due to delicate vertical bonding and high aspect ratio electroplating.
Innovation Solution
The solution involves a pattern definition device with a counter-electrode array that provides additional mechanical support and independent electrical connections for counter electrodes, eliminating the need for delicate vertical bonding and high aspect ratio electroplating by relocating ground connections to a separate component, using a CMOS wafer with electroplated electrodes and a counter-electrode array with uniform potential.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Extent of automation
If electrostatic deflector electrodes are integrated on a single plate with high circuitry integration, then beamlet deflection control is improved, but mechanical support and electrical connections become complex requiring delicate vertical bonding and high aspect ratio electroplating
Solution Approach 1:
The patent divides the pattern definition device into separate functional plates: an aperture plate for defining beamlets and a deflector array plate for beamlet deflection. Each plate is optimized for its specific function, with the deflector array plate containing both deflector electrodes and counter electrodes integrated on a single CMOS wafer. This segmentation eliminates the need for complex vertical bonding and high aspect ratio electroplating while maintaining high circuitry integration for precise beamlet deflection control.
2Device complexity
If counter electrodes are integrated on the same plate as deflector electrodes, then device integration is improved, but mechanical support and electrical connectivity become problematic
Solution Approach 1:
The patent merges the deflector electrodes and counter electrodes onto a single deflector array plate fabricated on a CMOS wafer. This integration provides both mechanical support and electrical connectivity for the counter electrodes through the wafer substrate, eliminating the need for separate counter electrode structures. The CMOS wafer serves as both the mechanical platform and electrical interconnection medium, simplifying manufacturing while achieving high device integration.
3Device complexity
If high aspect ratio electroplating is used to provide mechanical support and electrical connections, then integration density is improved, but manufacturing yield decreases
Solution Approach 1:
The patent uses a CMOS wafer as a standardized, well-established manufacturing platform to fabricate the deflector array plate. The CMOS technology provides proven processes for creating integrated circuits with high density connections without requiring experimental high aspect ratio electroplating. This approach copies the successful manufacturing methodology from the semiconductor industry, achieving high integration density while maintaining high manufacturing yield and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the electrical supply and mechanical support of the device, enhancing stability and integration density while reducing the risk of cross-talk and thermal conductivity issues, allowing for more effective beamlet deflection with lower deflection voltages.
Implementation Method 1
each deflector electrode is configured to deflect a beamlet traversing the respective blanking opening by an amount sufficient to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode
Data Source
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AI summary
A multi-beam pattern definition device (300) for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array means (302) has a plurality of electrostatic deflector electrodes (321) for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes (311) are electrically connected to a counter potential independently of the deflection array means through a counter-electrode array means (301). The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode (311), each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.