Coupled Level Shifter Circuit for Sub-1 ns Voltage Conversion

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Solution Overview

Problem

Existing level shifters in integrated circuits are limited by switching times greater than 1 ns and can fail with low supply voltage, unable to efficiently convert digital signals between different voltage domains.

Innovation Solution

An improved level shifter design incorporating a coupling stage and a level-switching stage, utilizing NMOS and PMOS transistors with capacitors to achieve faster switching times by oscillating node voltages between VDDL and 2*VDDL, enabling switching times below 1 ns while using standard core power supply voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If prior art level shifter designs are used, then the circuit can operate with standard power supply voltages, but the switching time is limited to greater than 1 ns

Engineering Contradiction:
Improveswitching timeVSAvoidoperational reliability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes the voltage parameter by generating a switched voltage that oscillates between VDDL and 2*VDDL, exceeding the standard supply voltage. This parameter change enables faster switching times below 1 ns while maintaining operational reliability through controlled voltage regulation and proper transistor sizing ratios.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If low supply voltage VDDL is used, then power consumption is reduced, but the level shifter can fail altogether due to insufficient peak voltage

Engineering Contradiction:
Improvepower consumptionVSAvoidswitching functionality
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent implements periodic action through the coupling stage that generates switched voltage oscillating between VDDL and 2*VDDL. This periodic voltage enhancement provides sufficient peak voltage for reliable transistor switching while maintaining low average power consumption through duty cycle control and efficient charge transfer.

Inventive Principle:
Principle #19Periodic action

3Speed

If transistor current driving capability is increased to reduce switching time, then switching speed improves, but variability in transistor performance increases

Engineering Contradiction:
Improveswitching speedVSAvoidtransistor performance consistency
Core Design Contradiction:
SpeedVSStability of the object's composition

Solution Approach 1:

The patent applies asymmetry by using different transistor sizing ratios in the coupling stage versus the level-shifting stage. The coupling stage transistors are sized to generate the switched voltage efficiently, while the level-shifting stage transistors are sized for stable signal conversion. This asymmetric design optimizes switching speed while maintaining performance consistency across process variations.

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentEP4010981B1Improved level shifter for integrated circuit
Publication Date: 2023.08.23 SILICON STORAGE TECHNOLOGY INC

AI summary

An improved level shifter for use in integrated circuits is disclosed. The level shifter is able to achieve a switching time below 1 ns while still using the core power supply voltages, VDDL and VDDH, used in the prior art. The improved level shifter comprises a coupling stage and a level-switching stage.