Coupling Ring Chamber Cleaning for Peripheral Plasma Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional hardmask materials lack etch selectivity and deposition rate, making it challenging to clean chamber components effectively, especially in large processing volumes where plasma density drops quickly radially outward from the substrate support, leading to inefficient cleaning of peripheral areas.
Innovation Solution
A substrate processing chamber with a coupling ring positioned between the substrate support and the lid, coupled to ground or an RF power source, and a movable cathode assembly, along with a dual-frequency RF power system, enhances plasma density and cleaning efficiency by controlling the gap between the substrate support and the coupling ring, using a combination of helium and carbon-containing gases for deposition and argon/oxygen-based plasmas for cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional hardmask materials are used, then etch selectivity is insufficient, but using alternative materials makes cleaning chamber components difficult
Solution Approach 1:
The patent introduces a movable substrate support that can be raised to different positions, changing the gap parameter between the substrate support and coupling ring. By adjusting this gap, the system optimizes plasma density distribution to achieve effective cleaning of chamber components while maintaining good etch selectivity through controlled deposition processes
2Volume of moving object
If the processing chamber volume is increased, then substrate processing capacity is improved, but plasma density drops quickly radially outward from the substrate support
Solution Approach 1:
The patent introduces a coupling ring as an intermediary component positioned between the substrate support and chamber lid. This coupling ring, when raised with the substrate support, creates a controlled gap that acts as a plasma confinement region, maintaining high plasma density in the processing volume and enabling effective cleaning of peripheral chamber components
Solution Approach 2:
The patent adds vertical movement capability to the substrate support, allowing it to be raised to create a gap with the coupling ring. This vertical dimension adjustment transforms the plasma distribution pattern, concentrating plasma density in the gap region and along the coupling ring, thereby extending effective plasma coverage to peripheral areas
3Quantity of substance
If the gap between substrate support and coupling ring is reduced, then plasma density is enhanced, but cleaning efficiency in peripheral areas decreases
Solution Approach 1:
The patent implements dynamic control of the gap between substrate support and coupling ring by making the substrate support movable. During deposition, the support is in a lower position with smaller gap for high plasma density. During cleaning, the support is raised to create optimal gap distance, allowing plasma to effectively reach peripheral components while maintaining sufficient density for efficient cleaning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves improved film deposition quality on substrates while efficiently cleaning hardmask films and chamber components, reducing stress and defects by optimizing plasma density and ion bombardment, especially in the outer regions of the substrate support.
Implementation Method 1
introducing a gas mixture including a helium-containing gas and a carbon-containing gas to a process volume of a process chamber. The carbon-containing gas is an alkyne such as acetylene. The gas mixture is energized with a radiofrequency (RF) source
Implementation Method 2
providing an RF bias power to an RF biasing electrode. The RF bias power source provides a controllable RF bias power to the RF biasing electrode to bombard ions onto the substrate support to clean the substrate support
Data Source
AI summary
Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.