Coupling Ring Contact Pad Layout for Plasma Sheath Uniformity
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Solution Overview
Problem
The increasing complexity of semiconductor device manufacturing due to larger wafer diameters and higher integration levels poses challenges in achieving uniform plasma processes and controlling plasma sheath regions during deposition and etching processes.
Innovation Solution
A substrate processing apparatus is designed with a substrate support, a coupling ring assembly, and upper contact pads to facilitate uniform plasma processing and control of the plasma sheath region, including a conductive side contact pad and upper contact pads that dissipate heat generated during the plasma process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional substrate processing apparatus is used for large diameter wafers, then the wafer can be processed, but uniform plasma process cannot be achieved
Solution Approach 1:
The substrate support is divided into multiple regions (central region and outer region) with different electrical connection structures. The central region connects to the upper electrode assembly through a central contact pad, while the outer region connects through an edge ring and edge contact pads. This segmentation allows different plasma regions to be controlled independently, achieving uniform plasma processing across large diameter wafers.
Solution Approach 2:
Different regions of the substrate support are provided with different contact pad configurations and electrical properties. The central region has a central contact pad with specific conductivity, while the outer region has an edge ring with edge contact pads. This local differentiation optimizes plasma distribution and sheath control in each region, resolving the uniformity issue for large wafers.
2Productivity
If plasma processing is performed on large diameter substrates, then higher integration is achieved, but plasma sheath region control becomes difficult
Solution Approach 1:
The plasma processing chamber is segmented into different sheath control zones through the multi-region substrate support structure. Each zone (central and outer regions) has its own electrical connection path, allowing independent control of plasma sheath thickness and potential distribution. This enables precise sheath control even when processing large diameter substrates for high integration devices.
3Temperature
If conventional contact pads are used, then simple structure is maintained, but heat dissipation is insufficient
Solution Approach 1:
The contact pad system is segmented into a central contact pad and multiple edge contact pads arranged around the substrate periphery. This segmentation creates multiple heat dissipation pathways through the substrate support structure, effectively distributing and dissipating heat generated during plasma processing, preventing localized overheating.
Solution Approach 2:
The edge ring acts as an intermediary thermal conduction path between the substrate support and the edge contact pads. It collects heat from the substrate edge region and transfers it to the edge contact pads, which then conduct heat to the substrate support structure, enhancing overall heat dissipation efficiency.
4Productivity
If plasma processing is performed, then semiconductor manufacturing is enabled, but component lifespan is reduced due to heat
Solution Approach 1:
The edge ring serves as a thermal intermediary that collects heat from the substrate edge region during plasma processing and transfers it to the edge contact pads and substrate support. This intermediary heat management function prevents excessive heat accumulation in the edge ring, thereby extending its operational lifespan while maintaining continuous plasma processing capability.
Solution Approach 2:
The contact pad and edge ring structure provides self-cooling through thermal conduction to the substrate support during normal operation. The continuous heat dissipation through the conductive paths prevents thermal degradation, allowing the components to sustain plasma processing operations for extended periods without additional active cooling systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a uniform plasma process while effectively controlling the plasma sheath region, improving the uniformity and efficiency of semiconductor device manufacturing by reducing defects and extending the lifespan of components like the edge ring.
Implementation Method 1
heat generated in the plasma processing region on the edge ring is dissipated through the edge ring, the at least one upper contact pad, the coupling ring assembly, the side contact pad, and the substrate support
Implementation Method 2
generating plasma in the plasma processing region to form a plasma region
Data Source
AI summary
Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.