Covalently Bonded Proton Accelerator for Maskless Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor manufacturing processes face challenges in achieving precise edge definition and feature size reduction due to light diffraction issues with photolithography, leading to increased costs and complexity with multiple masks and steppers, and existing alternatives like EUV and e-beam lithography have inefficiencies and damage risks.
Innovation Solution
A Direct Write On Wafer (DWOW) printing system utilizing a micro-collimated proton accelerator with an ionjet head assembly and miniature proton accelerators that selectively irradiate individual spots on a wafer with high precision, allowing for the direct writing of images onto a 300 mm diameter wafer in one minute.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography with 193 nm wavelength light is used to make 20 nm wide gates, then manufacturing precision is improved, but light diffraction causes large variation in edge definition
Solution Approach 1:
The patent replaces the optical photolithography system with a direct-write ion beam system. Instead of using 193 nm light that suffers from diffraction, the invention uses focused ion beams to directly write patterns onto the wafer, eliminating diffraction-related edge definition problems while achieving the required 20 nm precision.
Solution Approach 2:
The patent introduces an intermediary system between the light source and photoresist - specifically, a maskless direct-write system that uses ion beams to selectively expose photoresist. This intermediary approach allows precise pattern transfer without the diffraction limitations of direct optical projection.
2Manufacturing precision
If multiple masks and steppers are used to reduce feature size and cope with edge definition problems, then manufacturing precision is improved, but device complexity and cost increase
Solution Approach 1:
The patent segments the patterning function into a maskless direct-write system where patterns are written directly onto the wafer without requiring physical masks. This eliminates the need for multiple masks and steppers, reducing device complexity while maintaining the ability to achieve fine feature sizes through precise ion beam control.
Solution Approach 2:
Instead of using multiple masks to achieve fine features (the conventional approach), the patent inverts the approach by using a single maskless system that directly writes the final pattern. This reversal eliminates the multiplicative complexity of handling multiple masks and steppers.
3Ease of manufacture
If conventional photolithography processes are used, then ease of manufacture is maintained, but productivity decreases due to multiple manufacturing steps
Solution Approach 1:
The patent merges multiple separate lithography steps into a single maskless direct-write process. By combining the functions of multiple masks and steppers into one integrated system that writes patterns directly, the invention reduces the number of manufacturing steps while maintaining ease of manufacture, thereby improving productivity.
4Measurement precision
If EUV or e-beam lithography is used as alternatives, then edge definition is improved, but wafer damage risk increases and manufacturing efficiency decreases
Solution Approach 1:
The patent changes the fundamental parameter of the exposing particle from photons (EUV) or electrons (e-beam) to ions. This parameter change allows achieving sharp edge definition similar to e-beam while using a gentler ion beam that causes less damage to the wafer, and operating at lower costs compared to EUV systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The DWOW system achieves high-resolution lithography with precise spot sizes of 5 nm and efficient use of photoresists, reducing the need for multiple masks and steppers, thereby lowering costs and improving manufacturing throughput while minimizing wafer damage.
Implementation Method 1
A Direct Write On Wafer (DWOW) printing system utilizing a micro-collimated proton accelerator with an ionjet head assembly and miniature proton accelerators that selectively irradiate individual spots on a wafer
Implementation Method 2
Each channel is an individually gated acceleration channel that is formed in a solid dielectric material. Ions are accelerated down the acceleration channel.
Data Source
AI summary
An accelerator assembly includes a first chip and a second chip. An acceleration channel is formed into a surface of a first side of the first chip. The first side of the first chip is covalently bonded to a first side of the second chip such that the channel is a tubular void between the first and second chips. The channel has a tubular inside sidewall surface, substantially no portion of which is a metal surface. The channel has length-to-width ratio greater than five, and a channel width less than one micron. There are many substantially identical channels that extend in parallel between the first and second chips. In one specific example, the assembly is part of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.