Semiconductor Tool Cover Assembly With Laminar Cap Cooling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The high temperatures within the process chamber cap of semiconductor manufacturing tools, primarily due to plasma and heating elements, lead to uneven temperature distribution and potential thermal stress, affecting the efficiency and quality of chemical vapor deposition processes.
Innovation Solution
A cover assembly with an air-cooling system and gas intake apparatuses, featuring deflectors and fans, creates a laminar flow of cooling gas to evenly distribute temperature across the process chamber cap, preventing turbulence and maintaining a stable internal environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high temperatures are achieved through heating systems and plasma, then chemical reactions are activated and thin film deposition is enabled, but uneven temperature distribution and thermal stress occur
Solution Approach 1:
The cooling system divides the cooling gas flow into multiple zones using deflectors positioned at different locations within the cover assembly. This segmentation allows different regions of the process chamber cap to receive targeted cooling, creating a more uniform temperature distribution across the substrate surface while maintaining the high temperatures needed for chemical reactions.
Solution Approach 2:
The patent implements localized cooling by positioning deflectors and cooling gas inlets to target specific hot spots or regions requiring temperature control. The cooling gas flow is directed to specific areas of the process chamber cap rather than applying uniform cooling across all surfaces, allowing precise temperature management in different zones while maintaining reaction temperatures where needed.
2Productivity
If plasma is introduced to enhance chemical vapor deposition, then deposition efficiency is improved, but temperature control becomes more difficult due to additional heat generation
Solution Approach 1:
The cooling gas flow is maintained continuously throughout the deposition process, operating concurrently with the plasma generation. This continuous cooling action counterbalances the continuous heat generation from plasma, allowing the system to maintain stable temperature conditions throughout the entire deposition cycle without interrupting the productive plasma-enhanced chemical reactions.
Solution Approach 2:
The cooling gas acts as an intermediary substance that mediates between the heat-generating plasma and the substrate. By introducing this intermediate cooling medium, the system can harness the beneficial effects of plasma for enhanced deposition while the cooling gas absorbs and removes excess thermal energy, preventing overheating and maintaining optimal temperature control.
3Temperature
If cooling gas is introduced to manage temperature, then thermal stress is reduced, but turbulence may occur affecting process stability
Solution Approach 1:
The deflectors are designed with curved surfaces that guide the cooling gas flow in smooth, rounded paths rather than sharp angles. This curvature promotes laminar flow conditions by reducing flow separation and turbulence, allowing the cooling gas to effectively manage temperature while maintaining stable, non-turbulent flow that does not disrupt the deposition process or introduce compositional variations.
4Manufacturing precision
If uniform temperature distribution is achieved through cooling, then film quality improves, but device complexity increases due to additional cooling components
Solution Approach 1:
The cover assembly is designed to perform multiple functions: it provides structural support for the process chamber cap, serves as a mounting platform for deflectors and cooling gas inlets, and acts as the primary cooling component itself. By integrating these functions into a single multi-functional assembly rather than separate components, the system achieves uniform temperature distribution for improved film quality without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Uniform temperature distribution enhances process efficiency, improves film quality, extends equipment lifespan, reduces maintenance costs, and ensures workplace safety by minimizing thermal stress and hot spots.
Implementation Method 1
The laminar flow of the cooling gas flowing along the outer surface of the process chamber cap prevents turbulence, thereby ensuring an even temperature distribution across the cap
Implementation Method 2
high temperatures are achieved through the use of heating systems, which may include resistive heaters
Implementation Method 3
In variants like Plasma-Enhanced CVD (PECVD), the introduction of plasma generates additional heat due to ion collisions and excitation processes
Data Source
AI summary
A gas intake apparatus, configured to provide a gas to flow into an interior space a cover that covers a process chamber cap of a semiconductor manufacturing tool is provided. In one embodiment, the gas intake apparatus comprises a deflector configured to be positioned on a sidewall of the cover and a fan device configured to provide the gas to pass through the deflector. The fan device is configured to direct the gas to flow in a first direction towards the deflector. The deflector is configured to direct the gas from the fan device to flow in a second direction into the interior space of the cover. The first direction is different from the second direction.


