Cover Part Gas Nozzle Spacing for TiN Film Quality
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in maintaining sufficient reaction gas density and heat energy activation due to gas spreading and dilution, leading to suboptimal TiN film quality in contact structures.
Innovation Solution
A substrate processing apparatus with a cover part that includes an upstream side wall, a downstream side wall, and an upper wall to guide separation gas, maintaining a distance between the gas nozzle and the upstream side wall of at least 8 mm, which prevents reaction gas dilution and ensures high-density gas retention around the nozzle, enhancing the nitriding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between the gas nozzle and the upstream side wall is small, then the pressure of the reaction gas below the gas nozzle increases, but the reaction gas flows in the rotationally-upstream direction and flows over the flow regulating part together with the separation gas, causing dilution
Solution Approach 1:
The patent introduces a flow regulating part as an intermediary structure between the gas nozzle and the separation gas flow. This mediator controls the interaction between reaction gas and separation gas, preventing harmful mixing while maintaining beneficial pressure effects. The flow regulating part acts as a buffer zone that manages gas flow dynamics.
Solution Approach 2:
The patent creates different spatial zones with distinct gas flow characteristics. The area below the gas nozzle maintains high pressure and high reaction gas density, while the area above the flow regulating part allows separation gas to flow freely. This local differentiation of gas properties resolves the contradiction by confining high-density reaction gas to the process area while allowing separation gas to function in the separation area.
2Area of stationary object
If the reaction gases spread in the processing chamber, then the gases can be distributed, but the reaction gases are unable to receive sufficient heat energy and are diluted by the separation gas
Solution Approach 1:
The patent divides the processing chamber into distinct functional zones: a process area where reaction gases receive heat energy, a separation area where separation gas flows, and transition zones with flow regulating parts. This segmentation prevents premature mixing and ensures that reaction gases receive sufficient heat energy before encountering separation gas.
Solution Approach 2:
The patent utilizes the vertical dimension by positioning the flow regulating part below the gas nozzle, creating a layered gas flow structure. Reaction gas flows downward into a confined space where it receives heat energy, while separation gas flows in the opposite direction above. This dimensional arrangement allows both gases to coexist without immediate mixing, resolving the contradiction between distribution and heat energy reception.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the reaction gas density and partial pressure, improving the quality of the TiN film by maintaining high reactivity and adsorption efficiency, thereby reliably processing substrates.
Implementation Method 1
an upper wall disposed above the gas nozzle and configured to cause the separation gas flowing from an upstream side in the rotational direction to flow over the cover part to a downstream side in the rotational direction
Implementation Method 2
a titanium tetrachloride (TiCl4) gas is supplied to a semiconductor wafer so that Ti molecules are adsorbed on the wafer
Implementation Method 3
The wafer is heated while the turntable is rotated so that the reaction gases in the process areas are activated by heat energy received from the wafer
Implementation Method 4
an ammonia (NH3) gas is supplied to the wafer to nitride the Ti molecules and thereby form a TiN molecular layer
Data Source
AI summary
A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.