Cyclopentadienyl-Amidinate Precursors for Stable Yttrium-Scandium Thin Films
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Solution Overview
Problem
Existing precursors for forming yttrium- or scandium-containing thin films often have high viscosity and low volatility, which complicates thin film formation processes and results in suboptimal film quality.
Innovation Solution
A precursor compound characterized by Chemical Formula 1, which includes cyclopentadienyl and amidinate ligands, is developed. This compound exhibits low viscosity, high thermal stability, and high volatility, making it suitable for forming high-quality thin films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing precursors are used for thin film formation, then the deposition process can be performed, but the precursors exhibit high viscosity and low volatility which complicates the process and reduces film quality
Solution Approach 1:
The patent changes the chemical parameters of the precursor by introducing cyclopentadienyl and amidinate ligands, which fundamentally alter the physical properties of the compound. This results in a precursor with low viscosity and high volatility, directly resolving the contradiction between ease of operation and film quality
Solution Approach 2:
The patent creates a composite molecular structure combining cyclopentadienyl ligands and amidinate ligands with yttrium or scandium metal centers. This composite approach produces a precursor with optimized physical properties (low viscosity, high volatility) while maintaining the desired metal content for high-quality thin film formation
2Productivity
If precursors with high viscosity are used, then the deposition can proceed, but the process becomes complicated and film quality deteriorates
Solution Approach 1:
By changing the viscosity parameter through ligand selection, the patent enables simpler deposition processes. The low-viscosity precursor flows and vaporizes more easily, reducing process complexity while improving deposition efficiency and film quality
3Reliability
If conventional precursors are used, then thin film formation is possible, but thermal stability is insufficient leading to degradation
Solution Approach 1:
The patent combines cyclopentadienyl and amidinate ligands with metal centers to create a composite precursor structure that exhibits enhanced thermal stability. This composite approach ensures the precursor remains stable during deposition and subsequent processing, preventing degradation and ensuring high film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The precursor effectively forms high-quality yttrium- or scandium-containing thin films with improved structural stability, low viscosity, high volatility, and high thermal stability, suitable for semiconductor elements.
Implementation Method 1
forming a precursor thin film through deposition of the precursor for forming the thin film onto the surface of the substrate
Implementation Method 2
reacting the precursor thin film with a reactive gas
Data Source
AI summary
Proposed are a precursor for forming an yttrium- or scandium-containing thin film, the precursor being characterized by including a compound represented by Chemical Formula 1, a method for forming an yttrium- or scandium-containing thin film using the same, and a semiconductor element including the yttrium- or scandium-containing thin film. The precursor contains yttrium or scandium as the core metal atom and includes a cyclopentadienyl ligand providing characteristics such as low melting point and high volatility, as well as a novel amidinate ligand that provides properties such as high structural stability, low viscosity, high volatility, high thermal stability, and being a liquid at room temperature or being a solid having a low melting point. Therefore, the precursor exhibits physical properties suitable for use in a thin film formation process and thus can form a high-quality thin film.