CPP Magnetoresistance Element Dual Bias Layers

The single bias magnetic layer on the back side is segmented into two separate bias magnetic layers positioned on opposite sides of the free layers. This segmentation allows each layer to independently contribute to the bias magnetic field, achieving effective field application while maintaining structural simplicity through symmetry.

The bias magnetic field application is transitioned from a single-sided (one-dimensional) approach to a dual-sided (two-dimensional) symmetric arrangement. This dimensional change enables the magnetic fields from both bias layers to combine effectively, overcoming the limitation of single-layer field application.

The bias magnetic field generation function is segmented from a single back-side layer to two symmetrically positioned layers. This segmentation enables effective magnetic field application across the free layers, suppressing Barkhausen noise while maintaining manufacturing simplicity through symmetric process design.

The configuration parameter of the bias magnetic layer is changed from single-sided to dual-sided symmetric arrangement. This parameter change optimizes the magnetic field distribution, ensuring effective bias field application that reduces Barkhausen noise without significantly complicating the manufacturing process.

The antiferromagnetic layer and synthetic pinned layer structure are extracted and removed from the design. Instead, a simplified single pinned layer configuration is used, which achieves the required magnetization stability through alternative means, thereby reducing overall film configuration complexity and enabling shield gap reduction.

The functional capability of the conventional synthetic pinned layer system is copied and replicated using a simpler single pinned layer design. This functional copying achieves the same magnetization stability outcome with reduced structural complexity, eliminating the need for multiple coupled layers.