2D Heterostructure Coplanar Waveguide Bonding for Low RF Loss
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Solution Overview
Problem
Existing coplanar waveguide bonding methods, such as gold wire bonding and conductive adhesive application, result in parasitic inductance, signal reflection, and high transmission loss, especially in high-frequency bands, due to incompatibility of substrates and poor alignment accuracy, affecting signal integrity and bandwidth.
Innovation Solution
A low-loss coplanar waveguide bonding structure using two-dimensional heterostructures composed of a conductive and dielectric material layer to connect coplanar waveguides on different substrates, ensuring uniformity and reducing skin effect losses, with a manufacturing process involving femtosecond laser patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gold wire bonding is used to connect coplanar waveguides on different substrates, then electrical signal transmission is ensured, but parasitic inductance increases causing signal reflection and transmission loss in high-frequency bands
Solution Approach 1:
The patent removes the gold wire bonding interconnection layer from the signal transmission path. Instead of using discrete wire bonds, the coplanar waveguides are directly bonded through substrate bonding, eliminating the parasitic inductance source while maintaining electrical connectivity.
Solution Approach 2:
The patent employs composite substrate structures with specific material combinations (e.g., III-V族化合物半导体substrate with silicon substrate) that enable direct bonding of coplanar waveguides across different material systems, reducing interface losses and parasitic effects compared to wire bonding.
2Ease of manufacture
If conductive adhesive is used to bond coplanar waveguides, then alignment is achieved, but manual application results in low alignment accuracy and poor repeatability
Solution Approach 1:
The patent replaces manual mechanical adhesive application with automated bonding processes such as eutectic bonding or direct substrate bonding. This substitution eliminates human operational variability, achieving sub-micron alignment precision and high repeatability through controlled thermal and mechanical processes.
Solution Approach 2:
The patent utilizes controlled bonding parameters including temperature gradients, pressure application, and bonding time to achieve precise alignment and strong adhesion. By optimizing these parameters, the process achieves high manufacturing precision while maintaining ease of fabrication.
3Adaptability or versatility
If substrate materials are changed to accommodate different device requirements, then device compatibility improves, but interface inhomogeneity increases causing signal reflection and bandwidth reduction
Solution Approach 1:
The patent implements localized impedance matching structures and transition regions at material interfaces. By gradually changing the dielectric constant and conductor dimensions in the bonding region, the structure maintains signal integrity across different substrate materials while accommodating diverse device requirements.
Solution Approach 2:
The patent introduces intermediate transition layers or matching structures at the interface between different substrate materials (e.g., III-V族化合物半导体 and silicon). These intermediary structures bridge the impedance mismatch, reducing signal reflection and maintaining high-frequency signal integrity across heterogeneous material interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces high-frequency transmission reflection and maintains transmission bandwidth by uniformly covering conductor surfaces with high-conductivity materials, ensuring precise alignment without solder joints, suitable for connections between substrates of varying sizes.
Implementation Method 1
a two-dimensional conductive material layer for signal transmission
Implementation Method 2
a two-dimensional dielectric material layer under the two-dimensional conductive material layer
Implementation Method 3
manufacturing process involving femtosecond laser patterning
Data Source
AI summary
Disclosed are a low-loss coplanar waveguide bonding structure and a manufacturing method thereof, relating to the technical field of semiconductor. The low-loss coplanar waveguide bonding structure includes: a first coplanar waveguide on a first substrate, a second coplanar waveguide on a second substrate and having a same structure as the first coplanar waveguide, and a plurality of two-dimensional heterostructures connecting conductors of the first coplanar waveguide and the second coplanar waveguide in a one-to-one correspondence, where the two-dimensional heterostructures includes: a two-dimensional conductive material layer for signal transmission and a two-dimensional dielectric material layer under the two-dimensional conductive material layer.