Crack Prevention Dam Structure With Stress-Distribution Slits
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Solution Overview
Problem
Cracks and lifting of the dam structure in semiconductor devices during manufacturing due to external forces, which compromises product reliability.
Innovation Solution
A semiconductor device design featuring a substrate with a central region and edge region, incorporating a passivation layer with a crack prevention dam and stress distribution connectors that connect to a protection layer, distributing external forces effectively and preventing lifting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a crack prevention dam structure is provided in the scribe lane region, then crack prevention is improved, but the dam structure may be lifted during manufacturing process
Solution Approach 1:
The passivation layer is segmented into multiple functional regions: a protection layer covering the central region, a crack prevention dam in the edge region, and multiple stress distribution connectors spaced apart to form slits. This segmentation allows each region to perform its specific function independently while maintaining overall structural integrity.
Solution Approach 2:
The stress distribution connectors act as intermediary elements between the protection layer and the crack prevention dam. These connectors transfer and distribute external forces from the dam to the protection layer, preventing the dam from lifting while maintaining crack prevention functionality.
2Productivity
If external forces are applied during manufacturing process, then manufacturing progress is achieved, but cracks occur in the semiconductor device
Solution Approach 1:
The crack prevention dam and stress distribution connectors are designed beforehand to cushion and absorb external forces that will be applied during the manufacturing process. The stress distribution connectors specifically distribute these forces to prevent concentration that would lead to cracks.
Solution Approach 2:
The structure changes the distribution parameters of external forces by introducing stress distribution connectors that spread forces across multiple points. This parameter change in force distribution prevents localized stress concentration that would cause cracking during manufacturing operations.
3Strength
If the dam structure is closely connected to the protection layer, then structural support is improved, but stress distribution is reduced
Solution Approach 1:
The space between the protection layer and crack prevention dam is segmented into multiple regions with stress distribution connectors positioned at intervals. This segmentation creates slits that allow stress distribution while maintaining structural support through the distributed connector network.
Solution Approach 2:
Different regions have different properties: the protection layer provides local protection to the central region, the crack prevention dam provides local support in the edge region, and the stress distribution connectors provide localized stress management at specific intervals. This local quality differentiation optimizes both structural support and stress distribution.
Data Source
AI summary
A semiconductor device includes a substrate including a central region and an edge region surrounding the central region; and a passivation layer on the substrate, in which the passivation layer includes: a protection layer covering the central region of the substrate, a crack prevention dam extending in the edge region of the substrate to surround the protection layer, the crack prevention dam spaced apart from the protection layer, and a plurality of stress distribution connectors extending from an outer side surface of the protection layer to an inner side surface of the crack prevention dam, each stress distribution connector from the plurality of stress distribution connectors spaced apart from each other along the outer side surface of the protection layer to form a slit defined by at least four sides.