Crack Suppression Layer for Flexible Semiconductor Separation
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Solution Overview
Problem
Existing methods for manufacturing flexible semiconductor devices often result in cracks during the separation process, leading to defects and reduced yield due to the fragility of thin film transistors and the application of bending stress.
Innovation Solution
A method involving the formation of a crack suppression layer, either of metal film or resin film, around the semiconductor element to prevent crack progression and enhance mechanical strength, allowing for successful separation without damaging the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If physical force is used to separate the semiconductor element from the base material, then separation can be achieved, but cracks occur in the fragile thin film due to bending stress
Solution Approach 1:
A buffer layer is formed over the separation layer before forming the semiconductor element. This buffer layer is prepared in advance to provide mechanical support during the separation process, preventing cracks in the thin film when physical force is applied for separation.
Solution Approach 2:
The buffer layer acts as a flexible protective film that can withstand bending stress during separation. This thin film structure provides the necessary mechanical support to prevent cracks while allowing the separation process to proceed.
2Strength
If the semiconductor element is made thinner to reduce size and weight, then flexibility and impact resistance are improved, but the element becomes more fragile and prone to cracking
Solution Approach 1:
The semiconductor element is constructed as a composite structure with multiple layers including the buffer layer over the separation layer. This composite structure combines the thin, flexible semiconductor element with the mechanically stronger buffer layer, achieving both flexibility and crack resistance.
Solution Approach 2:
The buffer layer is prepared in advance before the semiconductor element is formed. This preliminary preparation ensures that the protective structure is in place before the fragile thin film is created, providing immediate mechanical support.
3Reliability
If a crack suppression layer is added around the semiconductor element, then crack progression is prevented and yield is improved, but the device complexity increases
Solution Approach 1:
The buffer layer is formed selectively over the separation layer in specific regions where cracks are most likely to occur. This localized approach provides crack suppression where needed without adding complexity to the entire device structure.
Data Source
AI summary
An object is to provide a manufacturing method of a semiconductor device in which a defect in characteristics due to a crack occurring in a semiconductor device is reduced. Provision of a crack suppression layer formed of a metal film in the periphery of a semiconductor element makes it possible to suppress a crack occurring from the outer periphery of a substrate and reduce damage to the semiconductor element. In addition, even if the semiconductor device is subjected to physical forces from the outer periphery in separation and transposition steps, progression (growth) of a crack to the semiconductor device can be suppressed by the crack suppression layer.