Cross-Coupled Transistor Structure With a Common Gate Layout
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Solution Overview
Problem
Existing cross-coupled structures with stacked transistors face complexity in fabrication due to split gate structures requiring additional wire areas and complicating methods, limiting integration density in integrated circuit devices.
Innovation Solution
A cross-coupled structure with a common gate structure that includes stacked gate structures contacting each other, simplifying fabrication and reducing the need for additional wire areas, while maintaining a compact design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a split gate structure is used in stacked transistors, then the transistors can be stacked to increase integration density, but the fabrication process becomes complex and requires additional wire areas
Solution Approach 1:
The patent merges the gate structures of multiple stacked transistors into a single common gate structure. Instead of fabricating separate gate structures for each transistor in the stack, the invention uses one shared gate structure that controls multiple transistors, thereby simplifying the fabrication process while maintaining high integration density.
Solution Approach 2:
The common gate structure serves multiple functions by simultaneously acting as the gate for multiple stacked transistors. This multi-functional design eliminates the need for separate gate structures and associated wiring for each transistor, reducing fabrication complexity and wire area requirements.
2Ease of manufacture
If a split gate structure with additional wires is used, then stacked transistors can be implemented, but the wire area increases and fabrication is complicated
Solution Approach 1:
The patent combines multiple gate structures into a single common gate structure, eliminating the need for separate wiring to each gate. This merging reduces the total wire area required while simplifying the fabrication process, as fewer wiring steps are needed to connect individual gates.
Solution Approach 2:
The invention extracts and eliminates the unnecessary separate gate structures and their associated wiring from the design. By removing these redundant elements and replacing them with a single common gate, the wire area is reduced and fabrication is simplified.
3Area of stationary object
If compact stacked transistor designs are implemented, then integration density increases, but the gate structure becomes more complex
Solution Approach 1:
The patent merges multiple gate structures into one common gate structure, reducing gate structure complexity while enabling compact stacked transistor designs. This approach allows efficient space utilization without the burden of complex individual gate structures for each transistor.
Data Source
AI summary
Cross-coupled structures are provided. Cross-coupled structures may include a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor, the second transistor, and the fourth transistor may be spaced apart from each other in a first direction, and the third transistor and the second transistor may be stacked in a second direction that is perpendicular to the first direction. The third transistor and the second transistor may include a common gate structure, a first portion of the common gate structure may be a gate structure of the second transistor, and a second portion of the common gate structure may be a gate structure of the third transistor.