Cross-Coupling Gate Design Using Diffusion Contacts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Advanced technology nodes, such as 14 nm and beyond, face challenges in constructing cross-coupling gate structures within two-gate pitch regions using traditional methods, resulting in low diffusion efficiency, reduced drive strength, and yield/reliability concerns due to complicated gate contact structures.
Innovation Solution
Implementing a cross-coupling-based design utilizing diffusion contact structures with vertices within a gate cut region, allowing for efficient coupling of gate contacts across gate structures, thereby enhancing diffusion efficiency and reducing manufacturing complexities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional gate contact structures are used in 14 nm technology nodes, then cross-coupling gate structures can be constructed, but diffusion efficiency is reduced and drive strength is weakened
Solution Approach 1:
The patent introduces a multi-dimensional approach by extending gate contact structures vertically through the use of via structures (via0, via1, via2) that connect different metal routing layers. This vertical dimensionality allows cross-coupling gates to achieve proper electrical connection and drive strength while maintaining compact horizontal footprint, thereby preserving diffusion efficiency in 14 nm technology nodes.
Solution Approach 2:
The patent employs via structures as intermediary elements that mediate the connection between gate contact structures and metal routing layers. These via structures serve as conductive bridges that enable effective cross-coupling without requiring lengthy diffusion paths, thus maintaining both drive strength and diffusion efficiency simultaneously.
2Adaptability or versatility
If gate cut regions are used to separate gate contact structures, then cross-coupling design is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the gate contact structure into multiple discrete components: gate contact structures, via structures (via0, via1, via2), and metal routing segments. This segmentation allows each component to be independently formed and controlled, simplifying the manufacturing process while enabling flexible cross-coupling designs with proper spacing and alignment.
Solution Approach 2:
By transitioning from a two-dimensional planar layout to a three-dimensional stacked architecture with multiple metal layers and via connections, the patent reduces the complexity of gate contact structures in the planar view. The vertical stacking allows cross-coupling functionality to be achieved without requiring complex lateral routing or multiple gate cut regions.
3Area of stationary object
If spacing between adjacent gate structures is reduced for scaling, then area scaling is achieved, but yield and reliability concerns increase
Solution Approach 1:
The patent resolves the spacing constraint by utilizing vertical separation through multiple metal routing layers connected by via structures. This allows adjacent gate structures to be placed closer together in the horizontal plane for area scaling, while the vertical via connections maintain reliable electrical pathways without requiring excessive lateral spacing.
Solution Approach 2:
The via structures serve as intermediary connection elements that decouple the spacing requirements between adjacent gate structures from the electrical connection quality. This mediation allows gates to be closely spaced for scaling while the via structures ensure reliable signal transmission, thereby maintaining yield and reliability despite reduced pitch.
Data Source
AI summary
An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.