Cross-Domain Isolation Circuit Using Segmented Transistor Stacks
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Solution Overview
Problem
The miniaturization of integrated circuits (ICs) has led to stricter layout design restrictions, particularly in cross-domain isolation circuits where maintaining isolation between power domains is challenging due to the complexity of routing and power supply voltage management across different domains.
Innovation Solution
The implementation of cross-domain isolation circuits using series-connected p-type and n-type transistors with specific supply voltage configurations and routing designs that maintain non-conductive semiconductor channels across power domain boundaries, ensuring isolation without breaking active zones at circuit boundaries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If miniaturization process is applied to ICs, then device size is reduced and functionality is increased, but layout design restrictions become stricter and power domain isolation becomes more difficult
Solution Approach 1:
The isolation circuit is divided into multiple transistor stages (first isolation circuit with first and second transistors, second isolation circuit with third and fourth transistors) arranged in series between different power domains. This segmentation allows the circuit to maintain isolation functionality while adapting to the stricter layout constraints imposed by miniaturization.
Solution Approach 2:
The patent extends the isolation approach into the vertical dimension by stacking transistors and using multiple conductive layers (first conductive layer, second conductive layer, third conductive layer) to connect active regions across different power domains. This dimensional approach enables isolation without breaking active zones at circuit boundaries.
2Reliability
If series-connected transistors are used for isolation, then power domain isolation is achieved, but routing complexity and supply voltage management become more challenging
Solution Approach 1:
The patent merges the isolation function with the existing active zone structure by ensuring that active regions are not broken at circuit boundaries. The series-connected transistors are integrated into the layout such that they share conductive structures (e.g., second conductive layer connecting first and second active regions, third conductive layer connecting third and fourth active regions), thereby reducing routing complexity while maintaining isolation.
Solution Approach 2:
The patent introduces intermediate conductive layers and structures that mediate between different power domains. These intermediates (conductive layers, shared active regions) provide controlled pathways that simplify routing while maintaining the necessary isolation between power domains through the series-connected transistor configuration.
3Stability of the object's composition
If active zones are not broken at circuit boundaries, then functional integrity is maintained, but isolation between power domains becomes more difficult
Solution Approach 1:
The patent applies different properties to different parts of the active zones. While active zones are not broken at boundaries, the local quality varies through the use of series-connected transistors with different threshold characteristics and conductive layers with different properties. This allows isolation to be achieved through controlled local variations rather than physical breaks in the active zones.
Solution Approach 2:
The isolation structure uses composite configurations combining multiple transistor types (n-type and p-type transistors in series), multiple conductive materials/layers, and shared active regions. This composite approach enables the circuit to maintain continuous active zones while achieving effective power domain isolation through the combined properties of the different components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively isolates different power domains within ICs, maintaining functional integrity and reducing power domain interference, thereby enhancing the reliability and efficiency of miniaturized ICs.
Implementation Method 1
maintaining isolation between power domains is challenging due to the complexity of routing and power supply voltage management across different domains
Data Source
AI summary
A circuit includes a first transistor, a second type-one transistor, a first type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The third type-one transistor has a first active-region conductively connected with an active-region of the first type-one transistor. Third type-one transistor has a second active-region and a gate conductively connected to each other. The fifth type-one transistor has a first active-region conductively connected with the gate of the third type-one transistor and has a second active-region configured to have a first supply voltage of a second power supply. The fifth type-one transistor is configured to be at a conducting state.