Cross-Flow Reaction Chamber for Uniform Multi-Substrate Processing
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Solution Overview
Problem
Semiconductor processing apparatuses face challenges in achieving uniform gas flow between substrates, leading to non-uniform processing characteristics and reduced process efficiency, particularly in vertical furnaces used for deposition processes like CVD and ALD.
Innovation Solution
A semiconductor processing apparatus with a reaction chamber designed to provide cross-flow of process gases between substrates, utilizing a gas distributor and exhaust system with strategically positioned openings and manifolds to direct gas flow in between substrates, enhancing uniformity and step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is provided into the reaction space using conventional methods, then the substrates can be processed, but the gas flow is non-uniform leading to non-uniform processing characteristics
Solution Approach 1:
The gas distributor is segmented into multiple gas injection ports arranged in a circular pattern, with each port providing gas to a specific radial zone. This segmentation allows independent control of gas flow to different regions, enabling uniform distribution across all substrates despite variations in radial distance from the center
Solution Approach 2:
The system applies local quality by providing different gas flow rates to different radial zones. Gas injection ports are strategically positioned and sized to deliver higher flow rates to outer substrates and lower flow rates to inner substrates, compensating for the natural gradient in gas distribution and achieving uniform processing conditions across all substrates
2Area of stationary object
If vertical furnaces are used to save cleanroom space, then the footprint is reduced, but the gas flow patterns become complex affecting deposition uniformity
Solution Approach 1:
The system transitions from conventional vertical or linear gas distribution to a radial/dimensional gas distribution pattern. Gas injection ports are arranged in a circular configuration that creates radial gas flow patterns, utilizing dimensional geometry to achieve uniform gas distribution across substrates positioned at different radial distances, thereby solving the uniformity problem inherent in compact vertical furnace designs
3Manufacturing precision
If gas injectors are used to address flow non-uniformity, then some uniformity is achieved, but challenges in terms of non-uniformity persist
Solution Approach 1:
The system merges multiple gas injection ports into a single integrated circular gas distributor assembly. This unified structure combines the functions of multiple individual injectors into one cohesive component, simplifying the overall system architecture while maintaining the capability to provide zoned gas distribution. The circular configuration naturally facilitates uniform gas delivery without requiring complex control mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves process gas utilization, leading to uniform film thickness, enhanced step coverage, and increased manufacturing throughput, particularly beneficial for high surface area structures like DRAM and VNAND.
Implementation Method 1
gas flow path substantially directed in between the substrates
Implementation Method 2
diffusion between the plurality of substrates
Data Source
AI summary
A semiconductor processing apparatus for processing a plurality of substrates is provided. In a preferred embodiment, the apparatus comprises a reaction chamber. The reaction chamber comprises a reaction space for receiving a substrate boat constructed and arranged for holding the plurality of substrates. The rection chamber further comprise a gas distributor for providing gas into the reaction space and a gas exhaust for removing gas from the reaction space. The boat, the gas distributor and the gas exhaust are constructed and arranged to at least partially enclose the substrates in the boat and to form a gas flow path, in use, from the gas distributor to the gas exhaust, wherein the gas flow path is substantially being directed in between the substrates.