Cross-Point Array Memory for Non-Volatile DIMM Data Retention
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Solution Overview
Problem
Conventional dual in-line memory modules (DIMMs) using flash memory face challenges with prolonged data transfer times during power loss and restoration, high energy consumption for operations, and limited endurance, leading to potential data loss and reduced lifespan.
Innovation Solution
Implementing a cross-point array memory in a non-volatile DIMM that performs bit storage based on bulk resistance changes, using a stackable cross-gridded data access array to efficiently save and restore data, reducing the time and energy required for data transfer and increasing endurance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If flash memory is used in conventional DIMMs for non-volatile storage, then data can be retained during power loss, but data transfer times are prolonged and energy consumption is high
Solution Approach 1:
The patent changes the fundamental storage mechanism from flash memory to cross-point array memory, which uses bulk resistance changes in phase-change material instead of charge trapping. This parameter change enables faster write speeds and lower energy consumption while maintaining non-volatile data retention capabilities during power loss
Solution Approach 2:
The patent replaces the flash memory storage mechanism with a cross-point array memory mechanism that uses programmable metallization cells or phase-change materials. This substitution eliminates the limitations of flash memory programming times and enables faster data transfer while reducing energy consumption through localized resistance changes
2Reliability
If flash memory is used in conventional DIMMs for non-volatile storage, then data can be retained during power loss, but energy consumption for read/write operations is high
Solution Approach 1:
The patent changes the storage mechanism to cross-point array memory using bulk resistance changes in phase-change material or programmable metallization cells. This enables lower energy consumption for write operations compared to flash memory, as the resistance change mechanism requires significantly less energy than flash memory programming
Solution Approach 2:
The patent substitutes flash memory with cross-point array memory technology, replacing the charge trapping mechanism with a resistance-based storage mechanism. This substitution reduces energy consumption for read and write operations while maintaining non-volatile data retention during power loss
3Reliability
If flash memory is used in conventional DIMMs, then non-volatile storage is achieved, but endurance is limited
Solution Approach 1:
The patent replaces flash memory with cross-point array memory, substituting the wear-prone charge trapping mechanism with a more durable resistance-based storage mechanism. This substitution significantly extends the operational lifespan and endurance of the memory module while maintaining non-volatile storage capability
Solution Approach 2:
The patent changes the storage mechanism to cross-point array memory using bulk resistance changes, which has superior endurance characteristics compared to flash memory. This parameter change enables the memory to withstand significantly more write cycles while maintaining data retention during power loss
4Loss of time
If cross-point array memory is implemented, then data transfer time is reduced and energy consumption is lowered, but manufacturing complexity increases
Solution Approach 1:
The patent implements a cross-point array memory structure that uses a three-dimensional cross-gridded architecture instead of planar flash memory. This dimensional change enables faster data access and lower energy consumption while the modular stackable design helps manage manufacturing complexity through standardized building blocks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cross-point array memory reduces data transfer times, lowers energy consumption, and extends the lifespan of the DIMM by enabling faster data recovery and more reliable storage with higher endurance.
Implementation Method 1
perform bit storage based on bulk resistance changes
Data Source
AI summary
A processing device determines a subset of a plurality of blocks from a volatile memory device of a memory sub-system, retrieves the subset of the plurality of blocks from the volatile memory device, and writes the subset of the plurality of blocks to a non-volatile cross point array memory device of the memory sub-system using a first type of write operation. The processing device further receives an indication of a power loss in the memory sub-system, and responsive to receiving the indication of the power loss, writes a remainder of the plurality of blocks to the non-volatile cross point array memory device using a second type of write operation.