Cross-Point Memory Cell Thermoelectric Sneak Current Suppression
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Solution Overview
Problem
Memory devices with cross-point architecture face challenges in reducing sneak current, which affects their performance and reliability due to uncontrolled current flows through unselected cells.
Innovation Solution
Incorporating a selecting element with a switching element and a thermoelectric element, where the thermoelectric element is designed to have complementary work functions and is thermoelectrically cooled or heated to manage current flows, and a heat insulating member to enhance thermoelectric conversion efficiency, thereby preventing sneak currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a cross-point architecture is used to increase storage density, then the number of memory cells per unit area increases, but sneak currents increase due to uncontrolled current flows through unselected cells
Solution Approach 1:
the resistance of the switching element varies according to a temperature of the switching element... the resistance of the unselected memory cells increases, thereby preventing occurrence of the sneak current
2Device complexity
If conventional selecting elements are used in cross-point architecture, then device complexity is reduced, but sneak currents cannot be effectively suppressed
Solution Approach 1:
the resistance of the switching element varies according to a temperature of the switching element... by controlling the resistance of the selecting element... the resistance of the unselected memory cells increases
3Object-generated harmful factors
If thermoelectric cooling is applied to increase resistance of unselected cells, then sneak currents are reduced, but energy consumption increases
Solution Approach 1:
a thermoelectric element coupled in series with the switching element... the resistance of the switching element varies according to a temperature of the switching element
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces sneak currents by increasing the resistance of unselected cells, improving the operating characteristics and reliability of memory devices with cross-point architecture.
Implementation Method 1
a thermoelectric element coupled in series with the switching element, the resistance of the switching element varies according to a temperature of the switching element
Implementation Method 2
the resistance of the switching element varies according to a temperature of the switching element
Implementation Method 3
a heat insulating member surrounding at least a sidewall of the selecting element
Data Source
AI summary
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a plurality of first lines extending in a first direction and arranged in parallel to each other; a plurality of second lines extending in a second direction crossing the plurality of first lines and arranged in parallel to each other; and a plurality of memory cells disposed in intersection regions of the plurality of first lines and the plurality of second lines, respectively, and wherein each of the memory cells may include: a selecting element including a switching element and a thermoelectric element that are coupled to each other, the switching element having a non-linear current-voltage characteristic; a variable resistance element coupled to the selecting element; and a heat insulating member surrounding at least a sidewall of the selecting element.