Cross-Point Memory Tile Segmentation for Power and Access Optimization

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Solution Overview

Problem

Next-generation memory devices require high capacity, low power consumption, and fast access times, while existing technologies face challenges in efficiently addressing multiple layers and optimizing access operations in cross-point array structures.

Innovation Solution

The method involves a memory device with multiple layers and tiles, where memory cells are accessed in a specific order based on electrical connections between layers, allowing for efficient access and reduced power consumption by optimizing the addressing order and using a cross-point array structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If memory cells of multiple layers are accessed using conventional addressing methods, then access capacity is increased, but power consumption increases and access time increases

Engineering Contradiction:
Improveaccess capacityVSAvoidpower consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by moving object

Solution Approach 1:

The memory device is divided into multiple tiles, where each tile contains memory cells from multiple layers. This segmentation allows the memory system to access only the specific tile containing the target memory cell, rather than activating all layers across the entire memory array. By segmenting the memory space into tiles, the patent reduces the number of simultaneously active memory cells during access operations, thereby lowering power consumption while maintaining the ability to access any memory cell across multiple layers.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements local quality by enabling different regions (tiles) of the memory device to be independently accessed. When a memory cell in a specific tile needs to be accessed, only that tile is activated with its associated word lines and bit lines, while other tiles remain inactive. This localized access approach ensures that power consumption is concentrated only in the necessary region rather than being distributed across the entire memory array, thus reducing overall power consumption while preserving full access capacity.

Inventive Principle:
Principle #3Local quality

2Quantity of substance

If memory cells of multiple layers are accessed using conventional addressing methods, then access capacity is increased, but access time increases

Engineering Contradiction:
Improveaccess capacityVSAvoidaccess time
Core Design Contradiction:
Quantity of substanceVSLoss of time

Solution Approach 1:

By segmenting the memory device into tiles where each tile contains memory cells from multiple layers, the patent enables parallel access within a tile. When accessing memory cells, the system can simultaneously activate multiple layers within the same tile using different bit line sets, rather than sequentially accessing each layer. This segmentation-based parallel access mechanism increases access capacity while reducing the time required to complete multi-layer access operations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a tile dimension as an additional organizational level beyond traditional layer-based addressing. This dimensional change allows the memory system to address memory cells through a hierarchical structure where tiles group multiple layers together. By adding this organizational dimension, the system can perform broader parallel access operations across layers within a tile while maintaining fine-grained control, thus improving access time without sacrificing access capacity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Quantity of substance

If cross-point array structure with multiple layers is implemented, then memory density is increased, but addressing complexity increases

Engineering Contradiction:
Improvememory densityVSAvoidaddressing complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent divides the high-density cross-point array into multiple tiles, where each tile contains a manageable subset of memory cells from multiple layers. This segmentation simplifies the addressing complexity by limiting the scope of address decoding to within each tile rather than across the entire large array. The tile-based organization allows the memory controller to manage high-density storage while maintaining relatively simple addressing logic for each individual tile, thus achieving high memory density without proportionally increasing addressing complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent adds a tile dimension to the traditional layer-based memory organization, creating a hierarchical addressing structure. Instead of directly addressing memory cells across all layers in a flat structure, the system first addresses tiles and then accesses specific layers within selected tiles. This dimensional addition organizes the high-density cross-point array into manageable units, reducing the complexity of address generation and decoding while preserving the high memory density achieved through multi-layer stacking.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20160055904A1Memory device having cross point array structure, memory system, and method of operating memory device
Publication Date: 2016.02.25 SAMSUNG ELECTRONICS CO LTD
  • US20160055904A1 patent drawing
  • US20160055904A1 patent drawing
  • US20160055904A1 patent drawing

AI summary

In a method of operating a memory device having a cross point array structure, the memory device includes multiple tiles, and each of the tiles includes memory cells of multiple layers. The method includes accessing, in a first tile, multiple memory cells of a first layer disposed in a region where at least one first line and at least one second line cross each other, accessing, in the first tile, multiple memory cells of a second layer disposed in a region where at least one first line and at least one second line cross each other, and accessing, after the memory cells of the multiple layers of the first tile are accessed, multiple memory cells included in a second tile. Related memory devices and memory systems are also discussed.