Crosslinkable Resist Underlayer Composition for Fine EUV Patterning
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Solution Overview
Problem
Existing resist underlayer films face issues with intermixing with resist films and inability to form fine patterns due to defects caused by semiconductor substrate interactions, particularly with advanced lithography techniques using EUV light or electron beams.
Innovation Solution
A resist underlayer film-forming composition containing a polymer with polymerizable multiple bonds in its side chains, linked via nucleophilic functional groups, which forms a cured film that can withstand pattern formation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional resist underlayer film is used, then the substrate is protected during lithography, but the resist film and underlayer film intermix causing pattern formation defects
Solution Approach 1:
The patent changes the chemical composition parameters of the underlayer film by incorporating polymerizable multiple bonds (vinyl, allyl, or phenyl groups) that can undergo crosslinking reactions. This parameter change creates a chemically distinct underlayer film with different solubility characteristics from the resist film, preventing intermixing while maintaining adhesion to the substrate.
Solution Approach 2:
The patent creates a composite material system consisting of the underlayer film containing polymerizable multiple bonds and the resist film deposited on top. The underlayer film's unique composition with crosslinkable groups provides a chemically distinct interface that prevents unwanted mixing while maintaining the functional relationship between the two layers.
2Reliability
If a resist underlayer film is used to prevent substrate interference, then substrate influence is reduced, but fine pattern formation becomes difficult due to film defects
Solution Approach 1:
The patent modifies the underlayer film's chemical structure by introducing polymerizable multiple bonds that enable crosslinking. This parameter change allows the underlayer to be cured into a stable, defect-free film that provides excellent substrate protection while maintaining the smoothness and uniformity required for fine pattern formation.
Solution Approach 2:
The patent applies preliminary action by forming and curing the underlayer film before depositing the resist film. The underlayer film is prepared in advance with crosslinkable groups, cured to create a stable foundation, and then the resist film is deposited on this pre-prepared surface, ensuring optimal conditions for subsequent fine pattern formation.
3Stability of the object's composition
If the underlayer film is made insoluble in resist solvent to prevent intermixing, then film separation is maintained, but fine pattern formation capability is reduced
Solution Approach 1:
The patent changes the solubility parameter of the underlayer film by incorporating polymerizable multiple bonds and crosslinking groups. The underlayer film is designed to be insoluble in resist solvents while maintaining a smooth, uniform surface that supports fine pattern formation. The crosslinked structure provides chemical stability without compromising surface quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of a resist underlayer film that prevents intermixing with resist films and allows for the creation of fine patterns, enhancing semiconductor element production processes.
Implementation Method 1
the polymer (A) has, in a side chain, one or two or more polymerizable multiple bonds selected from the group consisting of a carbon-carbon double bond, a carbon-carbon triple bond, a carbon-nitrogen double bond, and a carbon-nitrogen triple bond
Data Source
AI summary
A resist underlayer film-forming composition includes: a polymer; and a solvent, in which the polymer has, in a side chain, one or two or more polymerizable multiple bonds selected from the group consisting of a carbon-carbon double bond, a carbon-carbon triple bond, a carbon-nitrogen double bond, and a carbon-nitrogen triple bond.