Crosslinked Resist Underlayer Composition for Fine Pattern Transfer
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Solution Overview
Problem
Conventional resist underlayer films face challenges with low dry etching resistance, pattern collapse due to high aspect ratios, and inadequate etching selectivity between the photoresist film and substrate, especially in fine patterning processes for semiconductor devices.
Innovation Solution
A composition for forming a resist underlayer film comprising a polymer with specific structural formulas and a crosslinking agent, along with optional additives, which enhances etching resistance and thermal flowability, allowing for improved filling and planarizing properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a photoresist film is thinned to improve resolution for fine patterning, then resolution performance is improved, but etching resistance is reduced
Solution Approach 1:
The patent divides the resist system into two separate layers: a photoresist film for pattern formation and a resist underlayer film for etching resistance. This segmentation allows each layer to be optimized independently - the photoresist film can be thin for high resolution while the underlayer provides the necessary etching protection during substrate processing
Solution Approach 2:
The resist underlayer film acts as an intermediary between the photoresist film and the substrate. It receives the transferred pattern from the photoresist and protects the substrate during etching, mediating the interaction between the pattern-forming layer and the substrate to enable fine patterning with maintained etching resistance
2Length of moving object
If a pattern width is reduced without changing photoresist film thickness, then miniaturization is achieved, but resolution performance is lowered
Solution Approach 1:
The patent adds a vertical dimension to the resist system by introducing a resist underlayer film beneath the photoresist film. This dimensional expansion allows the photoresist film to be optimized for resolution (thin for fine patterns) while the underlayer compensates for the lost etching resistance, enabling miniaturization without sacrificing resolution performance
3Manufacturing precision
If a pattern is formed with high aspect ratio, then fine patterning is achieved, but pattern collapse occurs due to excessive aspect ratio
Solution Approach 1:
By segmenting the resist system into upper and lower layers with different functional optimizations, the patent enables the photoresist film to form fine patterns while the underlayer provides structural support and etching protection, preventing pattern collapse that would occur in a single thick-layer system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a resist underlayer film with superior etching resistance and planarizing capabilities, facilitating precise pattern transfer to substrates with complex structures, even at high temperatures and low oxygen concentrations, thus enhancing the accuracy of fine patterning in semiconductor manufacturing.
Implementation Method 1
a composition for forming a resist underlayer film, comprising: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1)
Implementation Method 2
a resist underlayer film having a different etching selectivity from a photoresist film (i.e., a resist upper layer film) is placed between the resist upper layer film and a substrate to be processed
Data Source
Figure 1(A)~1(F)
Figure 2(G)~3(K)
AI summary
The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1); and (C) an organic solvent, where the polymer (A) contains no hydroxy groups and the crosslinking agent (B) is contained in an amount of 5 to 50 parts by mass relative to 100 parts by mass of the polymer (A). This provides: a composition for forming a resist underlayer film that exhibits much better dry etching resistance than conventional resist underlayer film materials; a patterning process in which the composition is used as a resist underlayer film material; and a method for forming a resist underlayer film.