Crown-Shaped Bottom Capacitor Electrode for Higher Capacitance
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to deficiencies, necessitating an improvement in the manufacturing process to enhance device performance without increasing lateral dimensions.
Innovation Solution
A semiconductor device structure with a bottom capacitor electrode featuring a crown-shaped structure and interconnect portions is developed, which includes a base layer, surrounding portion, and interconnect portions within the dielectric layer, increasing the surface area and capacitance without expanding the capacitor's lateral dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the lateral dimensions of the capacitor are increased to increase capacitance, then the capacitance increases, but the device area increases which is not acceptable for miniaturized semiconductor devices
Solution Approach 1:
The patent transitions from a planar capacitor structure to a three-dimensional crown-shaped structure by adding vertical height and radial extent. The bottom capacitor electrode includes a base layer, a crown-shaped portion with first and second sidewalls extending upward, and a top surface that is higher than the base layer. This dimensional transformation allows increased capacitance within the same lateral footprint by utilizing the vertical dimension and creating a crown-shaped profile with increased surface area.
Solution Approach 2:
The crown-shaped structure embeds multiple functional regions within a compact footprint. The base layer is surrounded by the crown-shaped portion, which in turn contains the first and second sidewalls and top surface. This nested arrangement maximizes the use of available space by creating concentric layers of capacitive structure, allowing increased capacitance without proportionally increasing the lateral device area.
2Device complexity
If the manufacturing process is simplified to reduce complexity, then manufacturing complexity decreases, but device performance and capacitance increase opportunities are limited
Solution Approach 1:
The bottom capacitor electrode is segmented into distinct functional portions: a base layer, a crown-shaped portion with first and second sidewalls, and a top surface. This segmentation allows each portion to be formed using targeted deposition and etching steps, making the complex three-dimensional structure manufacturable through a series of simpler, well-defined process steps rather than requiring a single complex operation.
Solution Approach 2:
The patent employs preliminary patterning steps to define the crown-shaped structure before final electrode formation. Mask patterns are prepared in advance to guide the selective deposition and etching processes that create the crown-shaped profile. This preliminary action simplifies the overall manufacturing by establishing a clear roadmap for forming the complex geometry through sequential, controlled steps.
3Ease of manufacture
If a conventional planar capacitor structure is used, then manufacturing is simpler, but the surface area and capacitance are limited
Solution Approach 1:
The patent replaces the conventional planar (flat) capacitor structure with a crown-shaped structure featuring curved surfaces. The first and second sidewalls form inclined or curved surfaces that rise from the base layer to the top surface, creating a three-dimensional profile with increased surface area. This curvature transformation maintains manufacturability through standard deposition and etching while dramatically increasing the capacitive surface area compared to a flat planar structure.
Data Source
AI summary
The present disclosure provides a method for preparing a semiconductor device structure. The method includes forming a capacitor contact over a semiconductor substrate, and forming a base layer over the capacitor contact. The method also includes forming a dielectric layer over the base layer, and performing a first doping process to form a first doped region in the dielectric layer. The method further includes etching the dielectric layer such that a sidewall of the dielectric layer is aligned with a sidewall of the first doped region, and removing the first doped region to form a first gap structure in the dielectric layer after the dielectric layer is etched. In addition, the method includes forming a surrounding portion along sidewalls of the dielectric layer and a first interconnect portion in the first gap structure by a deposition process.