Cryogenic Interconnects for Superconducting Chip Stacking

The patent implements multi-chip module assemblies where multiple superconducting semiconductor structures are stacked vertically and interconnected through through-substrate vias. This nesting approach allows numerous chips to occupy a compact three-dimensional volume within the cryogenic chamber, dramatically increasing the number of computational elements that can be housed in limited cryogenic space while maintaining energy efficiency through superconducting interconnects.

The patent transitions from traditional two-dimensional chip layouts to three-dimensional multi-chip module architectures. By stacking chips vertically and utilizing through-substrate vias for interconnection, the design exploits the third dimension (Z-axis) to pack more computational elements into the same footprint area, effectively increasing density without expanding the horizontal cryogenic chamber footprint.

The patent combines multiple superconducting semiconductor structures into integrated multi-chip module assemblies with standardized interconnection schemes. By merging chips into pre-assembled modules with integrated through-substrate vias and interconnect structures, the system reduces the overall integration complexity compared to individually connecting numerous separate chips, while still achieving high computational power through the combined capability of multiple structures.

The patent divides the high-performance computing system into modular multi-chip module assemblies that can be independently fabricated, tested, and then systematically integrated. This segmentation into manageable modules with standardized interfaces simplifies the overall integration process, making it feasible to assemble complex high-performance systems without being overwhelmed by the complexity of connecting individual chips directly.

The patent employs composite interconnect structures that combine superconducting materials with conventional materials. The interconnects utilize superconducting traces and through-substrate vias filled with superconducting material, creating composite structures that maintain high critical current capabilities while being integrated into conventional semiconductor fabrication processes. This approach preserves manufacturing simplicity by using established fabrication techniques while upgrading to superconducting materials to achieve the required critical current performance.

The patent modifies interconnect structure parameters by transitioning from conventional non-superconducting materials to superconducting materials with significantly higher critical current densities. By changing the material parameters (critical temperature, critical current density) of the interconnect structures while maintaining similar geometric configurations and fabrication processes, the system achieves enhanced critical current capability without substantially increasing manufacturing complexity.