Cryogenic CMOS Qubit Gate Control With Charge-Locking Bias
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Solution Overview
Problem
Controlling qubit gates in quantum computing devices at cryogenic temperatures is challenging due to the need for a large number of voltage signals and the constraints on power dissipation in cryogenic environments, where conventional room temperature pulse generators face significant attenuation and heat dissipation issues.
Innovation Solution
A cryogenic-CMOS control system with integrated charge-locking and fast-gating circuits, utilizing a fully-depleted semiconductor on insulator (FDSOI) process, that generates voltage signals through capacitive and direct modes, with a finite state machine to manage charge locking and voltage distribution efficiently, reducing power dissipation by minimizing capacitance and using on-chip capacitors for long-term voltage bias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional room temperature pulse generators are used to control qubit gates, then voltage signals can be generated, but significant attenuation and heat dissipation occur in the cryogenic environment
Solution Approach 1:
The patent transitions the control system from room temperature to cryogenic temperature operation, moving the voltage signal generation function to the same thermal environment as the qubits. This dimensional change in operating temperature eliminates the need for thermal isolation and reduces heat dissipation into the quantum system.
Solution Approach 2:
The patent introduces cryogenic-CMOS control circuits as an intermediary component that operates at cryogenic temperatures to generate voltage signals directly at the qubit location. This intermediary eliminates the need for signal transmission through thermal boundaries, reducing attenuation and heat dissipation.
2Productivity
If a large number of voltage signals are generated to control thousands of qubits, then complete qubit control is achieved, but power dissipation constraints in cryogenic environments are violated
Solution Approach 1:
The patent segments the control system into multiple independent cryogenic-CMOS control circuits, each capable of generating voltage signals for individual qubits or qubit groups. This segmentation allows distributed control across thousands of qubits while each segment operates within power dissipation constraints at cryogenic temperatures.
Solution Approach 2:
The cryogenic-CMOS control circuits generate voltage signals locally at the cryogenic temperature environment, eliminating the need for external room temperature signal generation and transmission. This self-service approach reduces power dissipation by performing the control function in-situ without requiring energy-intensive signal transmission through thermal boundaries.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient control of qubit gates with reduced power consumption and heat dissipation, allowing for the management of thousands of qubits without the need for large heat dissipation, by leveraging the low leakage and tight integration of the cryogenic-CMOS control chip with the qubit plane.
Implementation Method 1
each of the plurality of charge locking circuits comprises a first terminal for receiving an input voltage signal and a second terminal for selectively receiving a first voltage amount or a second voltage amount
Data Source
AI summary
Systems and methods related to a cryogenic-CMOS interface for controlling qubit gates are provided. A system for controlling qubit gates includes a first device comprising a quantum device including qubit gates. The system further includes a second device comprising a control system configured to operate at the cryogenic temperature. The control system includes charge locking circuits, where each of the charge locking circuits is coupled to at least one qubit gate via an interconnect such that each of the charge locking circuits is configured to provide a voltage signal to at least one qubit gate. The control system further includes a control circuit comprising a finite state machine configured to provide at least one control signal to selectively enable at least one of the charge locking circuits and to selectively enable a provision of a voltage signal to a selected one of the charge locking circuit.