Cryogenic Gas Stream for SAM Selective Deposition Deposit Removal
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Solution Overview
Problem
In semiconductor manufacturing, self-assembled monolayer (SAM) based selective deposition techniques face challenges in achieving complete blocking of metal oxide deposition on dielectric surfaces due to defects and degradation under harsh process conditions, leading to unwanted deposits on protected surfaces, which affect process selectivity and device yield.
Innovation Solution
A method using a cryogenic gas stream with a high-speed cryogenic nozzle to remove unwanted deposits from protected surfaces by detaching them with momentum transfer, allowing for improved selectivity and precision in SAM-based selective depositions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If SAM layer is used to block dielectric surfaces during selective deposition, then selectivity of deposition is improved, but unwanted deposits still form on protected surfaces due to SAM defects and degradation
Solution Approach 1:
The patent extracts and removes the unwanted deposits from the protected dielectric surfaces using a cryogenic gas stream. This separation approach removes the harmful deposits that formed despite the SAM blocking layer, thereby achieving complete deposition selectivity without compromising the reliability of the SAM layer itself.
Solution Approach 2:
The patent converts the harmful effect of unwanted deposits into a beneficial process by using the cryogenic gas stream to selectively remove these deposits. The deposits that initially reduced reliability are now removed to restore complete blocking effectiveness, while the SAM layer remains intact for future processing steps.
2Manufacturing precision
If cryogenic gas stream is used to remove deposits, then deposition selectivity is improved, but potential damage to underlying surfaces may occur
Solution Approach 1:
The patent changes the parameter of gas temperature to cryogenic levels, which enables effective deposit removal while the low temperature prevents damage to the underlying dielectric surfaces and SAM layer. This parameter change allows the cryogenic gas stream to selectively remove unwanted deposits without causing thermal or mechanical damage to the sensitive underlying structures.
3Reliability
If SAM layer thickness is increased to improve blocking, then complete coverage is achieved, but throughput decreases due to asymptotic growth behavior
Solution Approach 1:
The patent applies a preliminary cryogenic gas stream treatment after the SAM deposition step to remove any unwanted deposits that may have formed during subsequent processing. This preliminary protective action eliminates the need to over-deposit the SAM layer to ensure complete blocking, thereby maintaining high throughput while achieving reliable complete coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cryogenic gas stream effectively removes deposits from protected surfaces, enhancing the selectivity and precision of SAM-based selective depositions, as evidenced by reduced deposition on protected surfaces in SEM images, without damaging the substrate.
Implementation Method 1
The substrate is exposed to a cryogenic gas stream to remove an amount of the film from the exposed portions of the first surface
Implementation Method 2
utilizing high-speed cryogenic gas nozzles to detach and remove deposits from substrates
Implementation Method 3
self-assembled monolayer (SAM) based selective deposition techniques
Implementation Method 4
the SAM grows in an asymptotic thickness vs deposition time and number of cycles
Data Source
AI summary
Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.