Cryogenic High-Voltage Switch Circuit With Voltage-Shifting FET Stages
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Solution Overview
Problem
Traditional semiconductor switches, such as those using CMOS technology, are limited to 5 volts and fail to meet the high-voltage requirements of quantum computing applications, which necessitate higher voltages, specific noise and delay criteria, and operation in cryogenic environments.
Innovation Solution
A high-voltage semiconductor switch comprising multiple FET circuits and voltage-shifting transistors, configured in subcircuits to operate at voltages exceeding +/- 5V, with capacitors to mitigate noise, and monolithically integrated for reduced losses, enabling efficient control of ion traps in quantum computing systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional CMOS technology is used, then manufacturing simplicity is maintained, but voltage capability is limited to 5 volts
Solution Approach 1:
The semiconductor switch is divided into multiple stages, with voltage-shifting transistors inserted between FET circuits. Each stage handles a portion of the voltage transformation, allowing the overall system to achieve high voltage capability while each individual component remains within standard manufacturing limits.
Solution Approach 2:
Voltage-shifting transistors are introduced as intermediary components between the input signal and the FET circuits. These intermediaries gradually transform the voltage levels, enabling high voltage operation without requiring the entire circuit to be manufactured for high voltage conditions.
2Temperature
If high voltage operation is implemented, then quantum computing requirements are met, but noise increases
Solution Approach 1:
The patent introduces capacitors that deliberately store and manage charge to mitigate noise. By converting the potentially harmful effect of charge accumulation into a controlled mechanism, the capacitors smooth out voltage fluctuations and reduce noise in the high-voltage signal path.
3Temperature
If multiple FET circuits and voltage-shifting transistors are used, then voltage capability exceeds +/- 5V, but device complexity increases
Solution Approach 1:
Multiple FET circuits and voltage-shifting transistors are merged into an integrated monolithic structure. This combining approach achieves high voltage capability through the collective action of multiple components while reducing overall complexity compared to discrete implementations.
Solution Approach 2:
The patent employs a composite circuit architecture that integrates different types of transistors (FETs and voltage-shifting transistors) and capacitors into a unified high-voltage semiconductor switch. This composite structure leverages the strengths of each component type to achieve the desired voltage capability.
4Loss of energy
If monolithic integration is implemented, then energy losses are reduced, but manufacturing precision requirements increase
Solution Approach 1:
All circuit components are merged into a single monolithic integrated circuit, eliminating the need for external connections and reducing parasitic losses. This integration approach minimizes energy losses while the standard semiconductor manufacturing process handles the precision requirements.
Data Source
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AI summary
A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.