Cryogenic MOSFET Power Circuit With Ambient Gate Control
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Solution Overview
Problem
Conventional aircraft power electronic systems have an unsatisfactory weight/electrical power ratio, necessitating the optimization of power components, particularly those handling strong currents, to reduce carbon emissions and improve efficiency.
Innovation Solution
An electronic circuit design featuring a power transistor operating at cryogenic temperatures with a control circuit at ambient temperature, utilizing a cryogenic interfacing circuit positioned close to the power transistor to enhance efficiency while maintaining standard component usage for cost-effectiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If power transistor operates at cryogenic temperature, then electrical power efficiency is improved, but device complexity increases
Solution Approach 1:
The control circuit is segmented into two distinct parts: a first control circuit operating at ambient temperature and a second control circuit operating at cryogenic temperature near the power transistor. This segmentation allows each circuit to operate in its optimal temperature range, improving overall power efficiency while managing complexity through functional separation.
Solution Approach 2:
A third control circuit acts as an intermediary between the ambient temperature control circuit and the cryogenic control circuit. This intermediary translates control signals between different temperature domains, enabling the power transistor to operate at cryogenic temperatures for improved efficiency while the control infrastructure remains partially at ambient temperature.
2Weight of moving object
If power transistor operates at cryogenic temperature, then weight/electrical power ratio is optimized, but manufacturing complexity increases
Solution Approach 1:
The system is divided into modular temperature zones with dedicated control circuits for each zone. This modular segmentation simplifies manufacturing by allowing independent testing and assembly of ambient temperature and cryogenic temperature components, reducing overall manufacturing complexity despite the dual-temperature operation.
3Ease of operation
If control circuit operates at ambient temperature, then ease of operation is improved, but power efficiency decreases
Solution Approach 1:
The control functionality is segmented across two temperature domains: ambient temperature control circuits provide ease of operation and standard component reliability, while cryogenic control circuits near the power transistor maximize power efficiency by operating in the same low-temperature environment.
Solution Approach 2:
The ambient temperature control circuit communicates with the cryogenic control circuit through an intermediary interface that translates between different operational environments, allowing operators to interact with the system at ambient temperature while maintaining cryogenic efficiency benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the power transistor's yield under cryogenic conditions, optimizing the weight/electrical power ratio and reducing costs, particularly beneficial in aircraft systems by minimizing weight and maximizing electrical power delivery.
Implementation Method 1
The power transistor and the interfacing circuit are cooled by a cryogenic fluid
Implementation Method 2
the power transistor comprises a body in which circulates a cryogenic fluid
Data Source
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AI summary
The invention relates to an electronic circuit (100) comprising a power transistor (110) of the MOSFET type comprising a gate (112) connected to a control circuit (140) of said gate (112), wherein: - said control circuit (140) of said gate (112) is configured to operate at a temperature called ambient temperature, non-cryogenic, and wherein, - said power transistor (110) as well as an interfacing circuit (130) connected between said gate (112) and said control circuit (140) are configured to operate at a cryogenic temperature, each of the components of said interfacing circuit (130) being established at a maximum distance (L) from the power transistor. It is thus advantageously possible to obtain an increased yield of the power transistor due to cryogenic conditions while using standard electronic components for its gate control circuit.