Cryogenic Oxygen Adsorption Bed for Nitrogen Impurity Removal
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Solution Overview
Problem
Existing cryogenic distillation techniques for producing high-purity oxygen gas are inadequate in removing nitrogen-containing impurities and other contaminants, which can disrupt the quality of oxide films in semiconductor and microelectronic device manufacturing.
Innovation Solution
A cryogenic adsorption method using adsorbent media at temperatures below −100 degrees Celsius to adsorb impurities like nitrogen and nitrogen oxides without condensing oxygen, controlled by a temperature management system to maintain a setpoint above oxygen's condensation temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If cryogenic distillation techniques are used to produce high-purity oxygen gas, then oxygen production capability is maintained, but nitrogen-containing impurities and other contaminants cannot be effectively removed
Solution Approach 1:
The patent employs porous adsorbent materials with specific pore sizes and surface properties that selectively adsorb nitrogen-containing impurities and other contaminants from oxygen gas. The porous structure provides high surface area for adsorption while allowing oxygen molecules to pass through, achieving effective impurity removal without compromising oxygen production capability.
Solution Approach 2:
The patent utilizes temperature-dependent adsorption parameters to selectively remove impurities. By controlling the temperature within specific ranges, the adsorption capacity for nitrogen-containing impurities is enhanced while oxygen remains in the gas phase. The temperature parameters are optimized to maximize impurity adsorption efficiency while maintaining oxygen purity.
2Manufacturing precision
If temperature is reduced below −100 degrees Celsius to adsorb impurities, then impurity removal effectiveness is improved, but oxygen may condense
Solution Approach 1:
The patent creates different local thermal environments within the adsorption system. The adsorbent materials are maintained at temperatures below −100 degrees Celsius to maximize impurity adsorption, while the bulk oxygen gas is kept at slightly higher temperatures above its condensation point. This local temperature differentiation allows effective impurity removal without causing oxygen condensation.
Solution Approach 2:
The patent introduces temperature control mechanisms as intermediaries between the cold adsorbent materials and the oxygen gas stream. Heat exchangers and thermal management systems act as intermediaries to maintain the adsorbent at cryogenic temperatures for effective adsorption while preventing the oxygen gas from reaching condensation temperatures, thus avoiding phase change.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes impurities to achieve oxygen purity levels of at least 99.9%, preventing nitrogen from forming nitrides and ensuring high-quality oxide films in semiconductor and microelectronic devices.
Implementation Method 1
contacting the oxygen gas with adsorption media at a temperature below −100 degrees Celsius to cause a nitrogen-containing impurity and optionally other impurities that are contained in the oxygen gas to adsorb onto a surface of the adsorption media
Implementation Method 2
a temperature control system that monitors a temperature within the cryogenic adsorption bed and controls the temperature to a setpoint above a condensation temperature of the gaseous oxygen
Data Source
AI summary
Described are processes and equipment that are useful to produce purified oxygen gas using a cryogenic adsorption bed to remove impurities such as nitrogen-containing impurities (e.g., nitrogen (N2), nitrogen oxides, ammonia, amines), water, carbon dioxide, carbon monoxide, hydrocarbons, among others, from oxygen gas.