Non-Cylindrical Cryogenic Pump for Ultra-High Vacuum Capture

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Solution Overview

Problem

Achieving ultra-high vacuum conditions in semiconductor manufacturing is challenging due to gas permeation through vacuum chamber walls, which contaminates the environment and reduces pump efficiency.

Innovation Solution

Employing a cryogenic pump with a non-cylindrical body shape and movable capture plate modules to enhance molecular capture and reduce escape rates, combined with a radiation device for regeneration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a cryogenic pump uses a traditional cylindrical body shape, then the structure is simple and easy to manufacture, but the molecular capture rate is insufficient and escape rate is high

Engineering Contradiction:
Improvemolecular capture rateVSAvoidbody structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by changing the pump body from a traditional cylindrical shape to a non-cylindrical shape with varying cross-sectional areas along the longitudinal axis. Specifically, the body includes a first section with a first cross-sectional area and a second section with a second cross-sectional area that is different from the first, creating an asymmetric structure that optimizes molecular capture and reduces escape rates while maintaining manufacturability

Inventive Principle:
Principle #4Asymmetry

2Reliability

If gas permeation through vacuum chamber walls is allowed to occur, then the vacuum chamber can be sealed, but the ultra-high vacuum conditions deteriorate due to contamination

Engineering Contradiction:
Improvevacuum seal integrityVSAvoidgas permeation contamination
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies parameter changes by utilizing temperature as a critical parameter to combat gas permeation contamination. The cryogenic pump operates at extremely low temperatures to condense and trap permeating gases on its cold surface, effectively removing contaminants that enter through wall permeation while maintaining the sealed vacuum chamber integrity

Inventive Principle:
Principle #35Parameter changes

3Productivity

If the opening lateral dimension is increased to improve molecular capture, then more molecules can enter the pump, but the pump body size and complexity increase

Engineering Contradiction:
Improvemolecular capture rateVSAvoidpump body dimensions
Core Design Contradiction:
ProductivityVSLength of stationary object

Solution Approach 1:

The patent applies dimensionality change by varying the cross-sectional area along the longitudinal axis of the pump body. Instead of increasing the opening size in a single dimension, the design uses a non-uniform distribution of cross-sectional areas (first section with first area, second section with second area), optimizing molecular capture through three-dimensional geometric configuration rather than simple dimensional scaling

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves the efficiency of the cryogenic pump by increasing molecular capture rates and reducing molecular escape, thereby maintaining ultra-high vacuum conditions effectively.

Implementation Method 1

Cryogenic pumps trap particles by condensing the particles on a cold surface

Methodology Applied
Scientific EffectCondensation: Condensation

Implementation Method 2

the second type of molecules may be desorbed from the capture plate by heating the capture plate with the radiation device

Methodology Applied
Scientific EffectDesorption: Desorption

Data Source

PatentUS20250354543A1Cryogenic pump for semiconductor processing
Publication Date: 2025.11.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250354543A1 patent drawing
  • US20250354543A1 patent drawing
  • US20250354543A1 patent drawing

AI summary

Embodiments of the present disclosure provide a method for semiconductor processing, including: loading, into a process chamber, a semiconductor substrate; operating a cryogenic pump coupled to the process chamber to cause a pressure in the process chamber to satisfy a first threshold pressure, the cryogenic pump including: a body having a flange, coupled to the process chamber, and an opening defined at a first end of the body, wherein a longitudinal axis of the body is defined from the first end of the body to a second end of the body, and wherein the body has a non-cylindrical shape with sides sloping radially outward, in relation to the longitudinal axis, in a direction away from the first end and towards the second end; and processing the semiconductor substrate enclosed in the process chamber.