Cryogenic Sputtering Apparatus for Magnetic Memory
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high speed and low power consumption, particularly in reducing surface roughness and enhancing perpendicular magnetic anisotropy of magnetic metal layers in magnetic memory devices.
Innovation Solution
A sputtering apparatus with a cooling unit that cools the substrate to extremely low temperatures, using a combination of inert gases with different evaporation points to form magnetic metal layers with reduced surface roughness and increased perpendicular magnetic anisotropy, employing multiple sputter guns and a gas supply system to control plasma generation and deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional sputtering is used to form magnetic metal layers, then the deposition process is simple and fast, but the surface roughness is high and perpendicular magnetic anisotropy is insufficient
Solution Approach 1:
The patent applies parameter changes by cooling the substrate to cryogenic temperatures (4K to 77K) during sputtering deposition. This temperature parameter change fundamentally alters the deposition process, enabling atoms to settle into lower-energy states that form smoother surfaces and enhance magnetic anisotropy, directly resolving the contradiction between surface roughness and process simplicity
Solution Approach 2:
The patent employs periodic action through pulsed DC sputtering combined with cryogenic cooling. The periodic nature of the sputtering pulses allows for controlled atom deposition while the continuous cooling maintains the substrate at optimal temperatures, creating a rhythmic process that produces both smooth surfaces and strong magnetic anisotropy
2Reliability
If conventional sputtering is used to form magnetic metal layers, then the deposition process is straightforward, but perpendicular magnetic anisotropy is insufficient
Solution Approach 1:
The patent utilizes parameter changes by conducting sputtering at cryogenic temperatures (4K to 77K) rather than room temperature. This temperature parameter fundamentally changes the atomic arrangement and magnetic properties during deposition, producing layers with enhanced perpendicular magnetic anisotropy that are critical for high-density magnetic memory devices
Solution Approach 2:
The patent introduces an intermediary element by using a buffer layer of non-magnetic metal oxide between the substrate and the magnetic metal layer. This intermediary buffer layer mediates the deposition process, providing a foundation that enhances the formation of perpendicular magnetic anisotropy in the subsequent magnetic metal layer
3Manufacturing precision
If substrate temperature is reduced to form magnetic metal layers, then surface roughness decreases and magnetic anisotropy increases, but the deposition rate may be affected
Solution Approach 1:
The patent employs periodic action through pulsed DC sputtering combined with cryogenic cooling. The periodic nature of the sputtering pulses allows for controlled atom deposition while the continuous cooling maintains the substrate at optimal temperatures, creating a rhythmic process that produces both smooth surfaces and strong magnetic anisotropy
Solution Approach 2:
The patent applies parameter changes by cooling the substrate to cryogenic temperatures (4K to 77K) during sputtering deposition. This temperature parameter change fundamentally alters the deposition process, enabling atoms to settle into lower-energy states that form smoother surfaces and enhance magnetic anisotropy, directly resolving the contradiction between surface roughness and process simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces surface roughness and enhances perpendicular magnetic anisotropy of magnetic metal layers, improving the performance and efficiency of magnetic memory devices by optimizing the deposition conditions and plasma characteristics.
Implementation Method 1
a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point
Implementation Method 2
a plurality of sputter guns in an upper portion of the chamber
Implementation Method 3
the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively
Data Source
AI summary
A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.