Cryogenic Analog Switch Using Domain-Wall Magnetic Control

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Solution Overview

Problem

The development of complex, integrated, and high-speed superconducting electronics is hindered by the lack of a highly scalable and high-speed cryogenic analog switch, which is essential for various technologies, as existing solutions like the Cryotron and superconducting-nanowire devices are not scalable for integrated circuit applications and introduce energy inefficiencies due to thermal inertia.

Innovation Solution

A cryogenic analog switch circuit comprising a magnetic strip with a domain wall that moves in response to current, controlling the magnetic field to switch a superconductor strip between superconducting and normal states, allowing for high-speed and efficient switching by modulating supercurrents using magnetic domains.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If thermal heating is used to switch superconducting material from superconducting state to normal state, then switching function is achieved, but thermal inertia causes slow switching speed and energy inefficiency

Engineering Contradiction:
Improveswitching speedVSAvoidenergy efficiency
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent replaces the thermal field mechanism with a magnetic field mechanism. Instead of using resistive heating to transition the superconducting material between states, the invention uses magnetic field modulation through domain wall movement in a ferromagnetic layer adjacent to the superconducting channel. This substitution eliminates thermal inertia effects and enables picosecond-scale switching speeds while maintaining energy efficiency.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the control parameter from temperature (thermal method) to magnetic field strength (magnetic method). By applying magnetic fields through domain wall manipulation in the ferromagnetic layer, the superconducting critical field is modulated, enabling rapid state transitions without thermal effects. This parameter change allows switching speeds in the tens of picoseconds range.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If wrapped wire structure with different Tc materials is used for magnetic field switching, then supercurrent attenuation is achieved, but the structure is not scalable for integrated circuit applications

Engineering Contradiction:
Improvescalability for integrated circuitsVSAvoiddevice structure complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent segments the device into distinct functional layers: a ferromagnetic layer for magnetic domain control and a superconducting layer for current switching. This segmentation allows independent optimization of each layer and enables standard integrated circuit fabrication techniques to be applied, achieving scalability while maintaining functionality.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from the one-dimensional wrapped wire configuration to a planar two-dimensional layered structure. This dimensional change enables the device to be fabricated using standard thin-film deposition and lithography techniques compatible with integrated circuit manufacturing, achieving scalability without sacrificing the magnetic field switching mechanism.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables high-speed switching with transition times in tens of picoseconds and scalable integration, maintaining non-transitory memory states and reducing energy inefficiencies by leveraging magnetic domain manipulation for supercurrent modulation.

Implementation Method 1

The magnetic strip generates a first and second magnetic domain separated by a domain wall

Methodology Applied
Scientific EffectMagnetic domain: Magnetism

Implementation Method 2

the superconductor strip is disposed adjacent the magnetic strip for undergoing a phase transition switching between a superconducting state and a normal state in response to a magnetic field controlled by the respective extents of the first and second magnetic domains

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Implementation Method 3

the superconductor strip is disposed adjacent the magnetic strip for undergoing a phase transition switching between a superconducting state and a normal state

Methodology Applied
Scientific EffectPhase transition: Phase Change

Implementation Method 4

Superconducting electronics are attractive for developing high energy efficiency, high sensitivity, and high speed technologies because they exhibit zero resistance when a direct current is applied

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Data Source

PatentUS20240313774A1Cryogenic Analog Switch Circuit
Publication Date: 2024.09.19 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY
  • US20240313774A1 patent drawing
  • US20240313774A1 patent drawing
  • US20240313774A1 patent drawing

AI summary

A cryogenic analog switch circuit includes a magnetic strip and a superconductor strip. The magnetic strip generates a first and second magnetic domain separated by a domain wall. In response to a current through the magnetic strip, the domain wall moves to change respective extents of the first and second magnetic domains within the magnetic strip. The superconductor strip is disposed adjacent the magnetic strip for undergoing a phase transition switching between a superconducting state and a normal state in response to a magnetic field controlled by the respective extents of the first and second magnetic domains within the magnetic strip.