Crystal Growth Control via Real-Time Parameter Feedback
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Solution Overview
Problem
Existing methods for controlling crystal growth lack accurate and efficient control of process conditions, leading to variations in crystal quality and device performance.
Innovation Solution
A method and system for controlling crystal growth by obtaining actual and reference crystal parameters, determining temperature and pulling control parameters, and adjusting these parameters in subsequent time slices to achieve precise control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional crystal growth control methods are used, then the process is simpler to operate, but the crystal quality and manufacturing precision deteriorate due to inaccurate control of process conditions
Solution Approach 1:
The patent implements a feedback control system that continuously monitors actual crystal parameters (mass, diameter, height, shape) and compares them with reference parameters. Based on the deviations detected, the system automatically adjusts temperature and pulling speed parameters to maintain crystal growth within specified tolerances, thereby improving manufacturing precision through closed-loop control.
Solution Approach 2:
The control system dynamically adjusts process parameters (temperature and pulling speed) in real-time based on actual crystal growth conditions. Rather than using fixed static parameters, the system adapts parameters continuously during the crystal growth process, enabling precise control of crystal quality while managing system complexity through adaptive rather than purely reactive control.
2Manufacturing precision
If traditional crystal growth control methods are used, then the control process is faster and simpler, but the crystal quality deteriorates due to lack of accurate parameter control
Solution Approach 1:
The system performs preliminary actions by pre-calculating reference crystal parameters and establishing control thresholds before the actual crystal growth process begins. This preparation enables faster real-time decision-making during growth, as the system only needs to compare actual parameters against pre-established references rather than performing complex calculations during the time-critical growth process.
Solution Approach 2:
The feedback mechanism quickly compares actual crystal parameters with reference values and immediately adjusts temperature and pulling speed parameters. This rapid closed-loop control minimizes the time delay between detection of parameter deviations and corrective action, maintaining crystal quality without significant time loss in the control process.
3Manufacturing precision
If traditional crystal growth control methods are used, then energy consumption is lower, but crystal quality deteriorates due to inability to maintain precise process conditions
Solution Approach 1:
The control system applies partial adjustments to temperature and pulling speed parameters only when and where deviations from reference parameters occur, rather than maintaining maximum control effort throughout the entire process. This selective application of control energy reduces overall energy consumption while still achieving the necessary manufacturing precision for high-quality crystal growth.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate and efficient control of crystal growth, resulting in high-quality crystals and improved device performance by maintaining precise control over temperature and pulling speed.
Implementation Method 1
determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter. The method may include determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter. The method may further include adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter
Data Source
AI summary
The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.