Crystal Growth in Semiconductor Holes via Bottom-Only Catalyst
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Solution Overview
Problem
Existing crystal growth methods in semiconductor devices face challenges in achieving high-quality crystals due to the growth of crystals from both the bottom and side portions of holes, leading to non-uniform crystal orientations and small crystal grains, especially when the aspect ratio of the holes is high, resulting in unstable semiconductor device characteristics.
Innovation Solution
A crystal growth method where a first member is formed at the bottom portion of the hole without adhering to the side portion, using specific elements like Au, Al, or Si as catalysts, and growing the crystal member at high temperatures to suppress side portion growth, ensuring uniform crystal orientation and large crystal grains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If crystal growth is performed in holes with high aspect ratio, then crystal growth can occur in deep structures, but crystal quality deteriorates due to non-uniform orientation and small grain size
Solution Approach 1:
The patent applies local quality by selectively placing the catalyst member only at the bottom surface of the hole, not on the side walls. This creates a localized catalyst distribution that directs crystal growth primarily from the bottom, ensuring uniform crystal orientation even in deep holes with high aspect ratios. The bottom surface receives full catalyst coverage while side walls remain catalyst-free, preventing non-uniform growth.
Solution Approach 2:
The patent employs preliminary action by forming the catalyst member on the bottom surface before crystal growth begins. This pre-positioning of the catalyst ensures that crystal growth initiates uniformly from the bottom in a controlled manner, establishing consistent crystal orientation from the start of the growth process rather than allowing uncontrolled nucleation throughout the hole.
2Quantity of substance
If catalyst is applied to side portions of the hole, then crystal growth can occur throughout the hole volume, but crystal quality deteriorates due to multiple growth centers
Solution Approach 1:
The patent uses local quality by restricting catalyst placement to the bottom surface only, creating a single localized growth center rather than distributed growth centers throughout the hole. This concentrated bottom-surface catalyst distribution produces fewer, larger crystal grains with uniform orientation, eliminating the quality issues caused by multiple simultaneous growth centers on side walls.
3Productivity
If conventional crystal growth is performed, then growth occurs from all surfaces, but device stability deteriorates due to non-uniform crystal characteristics
Solution Approach 1:
The patent applies local quality by concentrating the catalyst on the bottom surface only, which directs crystal growth to originate uniformly from a single location. This produces crystals with consistent orientation and uniform characteristics throughout, ensuring stable device performance while maintaining efficient growth rates from the concentrated catalyst source.
Solution Approach 2:
The patent employs preliminary action by pre-forming the catalyst member on the bottom surface before crystal growth. This ensures that growth initiates in a controlled, uniform manner from the bottom, establishing consistent crystal characteristics from the beginning and maintaining device stability throughout the growth process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the growth of high-quality crystals with uniform orientations, improving the stability and performance of semiconductor devices by preventing the adhesion of the catalyst to the side portions and ensuring continuous, uniform crystal growth from the bottom portion.
Implementation Method 1
growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member
Data Source
AI summary
According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.